Abstract

Inkjet-printed oxide thin-film transistors (TFTs) with a double-active layer structure were prepared to achieve better electrical properties and bias stability. The active layer was composed of an inkjet-printed ${In}_{2} {O} _{3}$ layer on top of an inkjet-printed zinc–tin oxide with various ${In}_{2} {O} _{3}$ ratios. The best electrical properties of the inkjet-printed double-active layer ZTO TFTs were obtained with 0.01 M of ${In}_{2} {O} _{3}$ : a mobility of 8.6 ${cm}^{2} /{V}~ {s}$ , a threshold voltage of 2.76 V, a subthreshold slope of 0.52 V/dec, and an on-to-off ${current~ratio}> {{10}} ^{6}$ . The electrical properties of the inkjet-printed double-active layer oxide TFTs were superior to those of the single-active layered TFTs.

© 2015 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription