Abstract
The electrical characteristics of bottom-gate amorphous indium
gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) are reported.
The a-IGZO TFTs without (w/o) a passivation layer have shown unstable
electrical properties in air, such as negative shift of threshold
voltage. This degradation is probably due to the IGZO environmental
instability, especially in rich-oxygen and/or hydrogen environments.
In this paper, the electrical behavior of TFTs passivated by various
materials are presented. It has been observed that the passivation
condition strongly affects device performance. The effect of passivation
process, such as plasma-enhanced chemical vapor deposition (PECVD)
and atomic layer deposition (ALD) on TFTs characteristics is investigated.
In both passivation cases, a negative shift of threshold voltage has
been observed by increasing the silane
$({SiH}_{4})$
flow rate in
the first case, or by increasing the
${Al}_{2}{O}_{3}$
thickness
in the later. By analyzing these TFTs with time of flight secondary
ion mass spectroscopy (ToF-SIMS), hydrogen was detected. It appears
that there is a significant correlation between hydrogen and TFT electrical
degradation. The mechanisms leading to this degradation and the solutions
to eliminate it are proposed.
© 2015 IEEE
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