Abstract
In this paper, we successfully fabricated Ti-doped ZnO (TZO)
thin film transistors (TFTs). Al-doped ZnO (AZO) film was adopted
as source/drain (S/D) electrode, forming an AZO/TZO hetero-junction
S/D contact. Meanwhile, TZO TFTs with ITO S/D electrode were also
fabricated for comparison. Both AZO and ITO films were fabricated
using radio frequency (RF) magnetron sputtering at room temperature
(RT). Compared with ITO, device with AZO S/D electrodes exhibits higher
${I} _{\rm on} /{I} _{\rm
off}$
ratio of 1.9
$\times {{10}} ^{9}$
, lower
${I} _{\rm off}$
of 570 fA, and comparable saturation mobility (
$\mu_{\rm sat}$
)
of 108.6
${{cm}}^{2}
\cdot {{V}} ^{-1} \cdot {{S}} ^{-1}$
. What’s
more, as channel length decreases, TFTs with AZO S/D electrodes still
show good performances.
© 2015 IEEE
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