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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 11,
  • Issue 12,
  • pp. 1031-1034
  • (2015)

New a-IGZO Pixel Circuit Composed of Three Transistors and One Capacitor for Use in High-Speed-Scan AMOLED Displays

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Abstract

An amorphous indium-gallium-zinc-oxide (a-IGZO) pixel circuit with three transistors and one capacitor is proposed for use in high-speed-scan active-matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit can compensate for the threshold voltage shifts in both normally-off and normally-on a-IGZO TFTs. Based on the simulation results with $\pm$ 1 V threshold voltage shifts of the driving TFT, the relative error rates of OLED currents are less than 4.46% for the entire range of data voltages $(-{9.9 V}{\sim}{5 V})$ .

© 2015 IEEE

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