Abstract
In this work, the conventional threshold voltage (
$V _{\rm th}$
) extraction
method assuming ohmic contacts in organic thin-film transistors (OTFTs) was
shown to be difficult to obtain the intrinsic
$V _{\rm th}$
values for devices with
non-negligible contact properties. A simple
$V _{\rm th}$
extraction method based
on a modified analytical current–voltage expression in the saturation
regime was thus proposed to exclude the influence of the contact properties.
By applying the method to experimental devices of two different contacts,
apparent
$V _{\rm th}$
values close to the intrinsic values were obtained, which proved
the method to be useful for accurate device characterization and modeling
of OTFTs.
© 2014 IEEE
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