Abstract

A hybrid thin film transistor (TFT) technology is proposed and demonstrated, which features a simultaneous fabrication of amorphous silicon (a-Si) TFTs with low off-current and polycrystalline silicon (poly-Si) TFTs with high carrier mobility on one substrate in one single process. For the a-Si TFT fabrication, the active film is the as-deposited LPCVD a-Si film, whereas, for the poly-Si TFT fabrication, the poly-Si active film is the locally crystallized LPCVD a-Si film. The localized crystallization is realized via using metal-induced lateral crystallization (MILC) method. This proposed technology is applicable to active-matrix organic light-emitting diode (AMOLED) pixel circuits where switching TFTs and driving TFTs are required to be with low off-current and high on-current, respectively.

© 2014 IEEE

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  1. M. Kimura, I. Yudasaka, S. Kanbe, H. Kobayashi, H. Kiguchi, S. Seki, S. Miyashita, T. Shimoda, T. Ozawa, K. Kitawada, T. Nakazawa, W. Miyazawa, H. Ohshima, "Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display," IEEE Trans. Electron Devices 46, 2282-2288 (1999).
  2. B. Geffroy, P. Roy, C. Prat, "Organic light-emitting diode (OLED) technology: Materials, devices and display technologies," Polymer Int. 55, 572-582 (2006).
  3. E. Fortunato, P. Barquinha, R. Martins, "Oxide semiconductor thin-film transistors: A review of recent advances," Adv. Mater. 24, 2945-2986 (2012).
  4. T. Kamiya, K. Nomura, H. Hosono, "Present status of amorphous In-Ga-Zn-O thin-film transistors," Sci. Technol. Adv. Mater. 11, 044305-044328 (2010).
  5. C. W. Kim, J. G. Jung, J. B. Choi, D. h. Kim, C. Yi, H. D. Kim, Y. H. Choi, J. Im, "LTPS backplane technologies for AMLCDs and AMOLEDs," Dig. Tech. Paper, SID Int. Symp. (2011) pp. 862-865.
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  7. A. A. Orouji, M. J. Kumar, "Leakage current reduction techniques in poly-Si TFTs for active matrix liquid crystal displays: A comprehensive study," IEEE Trans. Device Mater. Rel. 6, 315-325 (2006).
  8. T. Aoyama, K. Ogawa, Y. Mochizuki, N. Konishi, "Inverse staggered poly-Si and amorphous Si double structure TFT's for LCD panels with peripheral driver circuits integration," IEEE Trans. Electron Devices 43, 701-705 (1996).
  9. K. Shimizu, O. Sugiura, M. Matsumura, "On-chip bottom-gate polycrystalline and amorphous silicon thin film transistors using excimer laser annealing," Jpn. J. Appl. Phys. 29, L1775-L1777 (1990).
  10. P. Meia, J. B. Boycea, D. K. Forka, G. Andersona, J. Hoa, J. Lua, "Hybrid amorphous and polycrystalline silicon devices for large-area electronics," Proc. Mater. Res. Soc. Symp. (1998) pp. 3-12.
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  13. Y. W. Kim, W. K. Kwak, J. Y. Lee, W. S. Choi, K. Y. Lee, S. C. Kim, E. J. Yoo, "40 inch FHD AM-OLED display with IR drop compensation pixel circuit," SID Int. Symp. Dig. Tech. Paper (2009) pp. 85-87.
  14. H. Wang, M. Chan, S. Jagar, V. M. C. Poon, M. Qin, Y. Wang, P. K. Ko, "Super thin-film transistor with SOI CMOS performance formed by a novel grain enhancement method," IEEE Trans. Electron Devices 47, 1580-1586 (2000).
  15. M. Wong, Z. Jin, G. A. Bhat, H. S. Kwok, "Characterization of the MIC/MILC interface and its effects on the performances of MILC thin film transistors," IEEE Trans. Electron Devices 47, 1061-1067 (2000).
  16. R. Wehrspohn, S. Deane, I. French, I. Gale, J. Hewett, M. Powell, J. Robertson, "Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors," J. Appl. Phys. 87, 144-154 (2000).
  17. G. Bhat, H. Kwok, M. Wong, "Plasma hydrogenation of metal-induced laterally crystallized thin film transistors," IEEE Electron Device Lett. 21, 73-75 (2000).
  18. M. Cao, Member, T. Zhao, K. C. Saraswat, J. D. Plummer, "Study on hydrogenation of polysilicon thin film transistors by ion implantation," IEEE Trans. Electron Devices 42, 1134-1140 (1995).
  19. L. Han, Y. Huang, J. Sturm, S. Wagner, "Self-aligned top-gate coplanar a-Si:H thin-film transistors with a ${\rm SiO}_{2}$ –silicone hybrid gate dielectric," IEEE Electron Device Lett. 32, 36-38 (2011).

2012 (1)

E. Fortunato, P. Barquinha, R. Martins, "Oxide semiconductor thin-film transistors: A review of recent advances," Adv. Mater. 24, 2945-2986 (2012).

2011 (1)

L. Han, Y. Huang, J. Sturm, S. Wagner, "Self-aligned top-gate coplanar a-Si:H thin-film transistors with a ${\rm SiO}_{2}$ –silicone hybrid gate dielectric," IEEE Electron Device Lett. 32, 36-38 (2011).

2010 (1)

T. Kamiya, K. Nomura, H. Hosono, "Present status of amorphous In-Ga-Zn-O thin-film transistors," Sci. Technol. Adv. Mater. 11, 044305-044328 (2010).

2006 (2)

B. Geffroy, P. Roy, C. Prat, "Organic light-emitting diode (OLED) technology: Materials, devices and display technologies," Polymer Int. 55, 572-582 (2006).

A. A. Orouji, M. J. Kumar, "Leakage current reduction techniques in poly-Si TFTs for active matrix liquid crystal displays: A comprehensive study," IEEE Trans. Device Mater. Rel. 6, 315-325 (2006).

2005 (1)

2001 (1)

K. Pangal, J. C. Sturm, S. Wagner, "Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer," IEEE Trans. Electron Devices 48, 707-714 (2001).

2000 (4)

H. Wang, M. Chan, S. Jagar, V. M. C. Poon, M. Qin, Y. Wang, P. K. Ko, "Super thin-film transistor with SOI CMOS performance formed by a novel grain enhancement method," IEEE Trans. Electron Devices 47, 1580-1586 (2000).

M. Wong, Z. Jin, G. A. Bhat, H. S. Kwok, "Characterization of the MIC/MILC interface and its effects on the performances of MILC thin film transistors," IEEE Trans. Electron Devices 47, 1061-1067 (2000).

R. Wehrspohn, S. Deane, I. French, I. Gale, J. Hewett, M. Powell, J. Robertson, "Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors," J. Appl. Phys. 87, 144-154 (2000).

G. Bhat, H. Kwok, M. Wong, "Plasma hydrogenation of metal-induced laterally crystallized thin film transistors," IEEE Electron Device Lett. 21, 73-75 (2000).

1999 (1)

M. Kimura, I. Yudasaka, S. Kanbe, H. Kobayashi, H. Kiguchi, S. Seki, S. Miyashita, T. Shimoda, T. Ozawa, K. Kitawada, T. Nakazawa, W. Miyazawa, H. Ohshima, "Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display," IEEE Trans. Electron Devices 46, 2282-2288 (1999).

1996 (1)

T. Aoyama, K. Ogawa, Y. Mochizuki, N. Konishi, "Inverse staggered poly-Si and amorphous Si double structure TFT's for LCD panels with peripheral driver circuits integration," IEEE Trans. Electron Devices 43, 701-705 (1996).

1995 (1)

M. Cao, Member, T. Zhao, K. C. Saraswat, J. D. Plummer, "Study on hydrogenation of polysilicon thin film transistors by ion implantation," IEEE Trans. Electron Devices 42, 1134-1140 (1995).

1990 (1)

K. Shimizu, O. Sugiura, M. Matsumura, "On-chip bottom-gate polycrystalline and amorphous silicon thin film transistors using excimer laser annealing," Jpn. J. Appl. Phys. 29, L1775-L1777 (1990).

1989 (1)

K. Sera, F. Okumura, H. Uchida, S. Itoh, S. Kaneko, K. Hotta, "High-performance TFT's fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film," IEEE Trans. Electron Devices 36, 2868-2872 (1989).

Adv. Mater. (1)

E. Fortunato, P. Barquinha, R. Martins, "Oxide semiconductor thin-film transistors: A review of recent advances," Adv. Mater. 24, 2945-2986 (2012).

IEEE Electron Device Lett. (1)

L. Han, Y. Huang, J. Sturm, S. Wagner, "Self-aligned top-gate coplanar a-Si:H thin-film transistors with a ${\rm SiO}_{2}$ –silicone hybrid gate dielectric," IEEE Electron Device Lett. 32, 36-38 (2011).

IEEE Trans. Electron Devices (1)

K. Sera, F. Okumura, H. Uchida, S. Itoh, S. Kaneko, K. Hotta, "High-performance TFT's fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film," IEEE Trans. Electron Devices 36, 2868-2872 (1989).

IEEE Electron Device Lett. (1)

G. Bhat, H. Kwok, M. Wong, "Plasma hydrogenation of metal-induced laterally crystallized thin film transistors," IEEE Electron Device Lett. 21, 73-75 (2000).

IEEE Trans. Electron Devices (1)

M. Kimura, I. Yudasaka, S. Kanbe, H. Kobayashi, H. Kiguchi, S. Seki, S. Miyashita, T. Shimoda, T. Ozawa, K. Kitawada, T. Nakazawa, W. Miyazawa, H. Ohshima, "Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display," IEEE Trans. Electron Devices 46, 2282-2288 (1999).

IEEE Trans. Device Mater. Rel. (1)

A. A. Orouji, M. J. Kumar, "Leakage current reduction techniques in poly-Si TFTs for active matrix liquid crystal displays: A comprehensive study," IEEE Trans. Device Mater. Rel. 6, 315-325 (2006).

IEEE Trans. Electron Devices (5)

T. Aoyama, K. Ogawa, Y. Mochizuki, N. Konishi, "Inverse staggered poly-Si and amorphous Si double structure TFT's for LCD panels with peripheral driver circuits integration," IEEE Trans. Electron Devices 43, 701-705 (1996).

M. Cao, Member, T. Zhao, K. C. Saraswat, J. D. Plummer, "Study on hydrogenation of polysilicon thin film transistors by ion implantation," IEEE Trans. Electron Devices 42, 1134-1140 (1995).

H. Wang, M. Chan, S. Jagar, V. M. C. Poon, M. Qin, Y. Wang, P. K. Ko, "Super thin-film transistor with SOI CMOS performance formed by a novel grain enhancement method," IEEE Trans. Electron Devices 47, 1580-1586 (2000).

M. Wong, Z. Jin, G. A. Bhat, H. S. Kwok, "Characterization of the MIC/MILC interface and its effects on the performances of MILC thin film transistors," IEEE Trans. Electron Devices 47, 1061-1067 (2000).

K. Pangal, J. C. Sturm, S. Wagner, "Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer," IEEE Trans. Electron Devices 48, 707-714 (2001).

J. Appl. Phys. (1)

R. Wehrspohn, S. Deane, I. French, I. Gale, J. Hewett, M. Powell, J. Robertson, "Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors," J. Appl. Phys. 87, 144-154 (2000).

J. Display Technol. (1)

Jpn. J. Appl. Phys. (1)

K. Shimizu, O. Sugiura, M. Matsumura, "On-chip bottom-gate polycrystalline and amorphous silicon thin film transistors using excimer laser annealing," Jpn. J. Appl. Phys. 29, L1775-L1777 (1990).

Polymer Int. (1)

B. Geffroy, P. Roy, C. Prat, "Organic light-emitting diode (OLED) technology: Materials, devices and display technologies," Polymer Int. 55, 572-582 (2006).

Sci. Technol. Adv. Mater. (1)

T. Kamiya, K. Nomura, H. Hosono, "Present status of amorphous In-Ga-Zn-O thin-film transistors," Sci. Technol. Adv. Mater. 11, 044305-044328 (2010).

Other (3)

C. W. Kim, J. G. Jung, J. B. Choi, D. h. Kim, C. Yi, H. D. Kim, Y. H. Choi, J. Im, "LTPS backplane technologies for AMLCDs and AMOLEDs," Dig. Tech. Paper, SID Int. Symp. (2011) pp. 862-865.

P. Meia, J. B. Boycea, D. K. Forka, G. Andersona, J. Hoa, J. Lua, "Hybrid amorphous and polycrystalline silicon devices for large-area electronics," Proc. Mater. Res. Soc. Symp. (1998) pp. 3-12.

Y. W. Kim, W. K. Kwak, J. Y. Lee, W. S. Choi, K. Y. Lee, S. C. Kim, E. J. Yoo, "40 inch FHD AM-OLED display with IR drop compensation pixel circuit," SID Int. Symp. Dig. Tech. Paper (2009) pp. 85-87.

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