Abstract
A hybrid thin film transistor (TFT) technology is proposed
and demonstrated, which features a simultaneous fabrication of amorphous silicon
(a-Si) TFTs with low off-current and polycrystalline silicon (poly-Si) TFTs
with high carrier mobility on one substrate in one single process. For the
a-Si TFT fabrication, the active film is the as-deposited LPCVD a-Si film,
whereas, for the poly-Si TFT fabrication, the poly-Si active film is the locally
crystallized LPCVD a-Si film. The localized crystallization is realized via
using metal-induced lateral crystallization (MILC) method. This proposed technology
is applicable to active-matrix organic light-emitting diode (AMOLED) pixel
circuits where switching TFTs and driving TFTs are required to be with low
off-current and high on-current, respectively.
© 2014 IEEE
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