Abstract

The authors report the study of “thermal droop” for GaN-based light-emitting diodes (LEDs) using a single AlGaN layer with various thicknesses as the electron blocking layer (EBL). It was found that the effect of bandgap narrowing at elevated temperatures on the drop of LED output power should be negligibly smaller. It was also found that the inserted EBL could significantly reduce “thermal droop” due to the effective suppression of electron overflow at elevated temperatures. Furthermore, it was found that we could drastically reduce the output power decrease by about 42% with a properly designed EBL.

© 2014 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription