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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 10,
  • Issue 11,
  • pp. 979-983
  • (2014)

Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs

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Abstract

We report operation characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) annealed in dry ${{O}} _{2}$ at temperatures up to 700 $^{\circ}{{C}}$ . The largest TFT mobilities were obtained by annealing at 200 $ ^{\circ}{{C}}$ –300 $ ^{\circ}{{C}}$ and the smallest subthreshold voltage swing ( ${\rm S}$ ) was obtained at 200 $^{\circ}{{C}}$ , while those annealed at higher ${\rm T}$ exhibited poorer mobilities and ${\rm S}$ values. The TFTs annealed at $\ge {{600}} \ ^{\circ}{{C}}$ were crystallized and exhibited further poorer characteristics probably due to grain boundary issues; while, the deterioration by the 400 $ ^{\circ}{{C}}$ –500 $ ^{\circ}{{C}}$ annealing is attributed to depletion of hydrogen and consequent de-passivation effects. Device simulations and photoresponse spectroscopy extracted systematic variation of trap densities in the a-IGZO layer.

© 2014 IEEE

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