Abstract
We report operation characteristics of amorphous In-Ga-Zn-O
(a-IGZO) thin-film transistors (TFTs) annealed in dry
${{O}} _{2}$
at temperatures up to
700
$^{\circ}{{C}}$
. The largest TFT mobilities were obtained by annealing at 200
$ ^{\circ}{{C}}$
–300
$ ^{\circ}{{C}}$
and
the smallest subthreshold voltage swing (
${\rm S}$
) was obtained at 200
$^{\circ}{{C}}$
, while those annealed
at higher
${\rm T}$
exhibited poorer mobilities and
${\rm S}$
values. The TFTs annealed at
$\ge {{600}} \ ^{\circ}{{C}}$
were crystallized and exhibited further poorer characteristics
probably due to grain boundary issues; while, the deterioration by the 400
$ ^{\circ}{{C}}$
–500
$ ^{\circ}{{C}}$
annealing
is attributed to depletion of hydrogen and consequent de-passivation effects.
Device simulations and photoresponse spectroscopy extracted systematic variation
of trap densities in the a-IGZO layer.
© 2014 IEEE
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