Abstract

We fabricated bottom-gate, bottom-contact oxide thin-film transistors (TFTs) using solution-processed strontium -doped zinc-tin-oxide (SrZTO) as the active material and high- $\kappa$ aluminum oxide (AlO $_{\rm x}$ ) gate insulator at the maximum process temperature of 300 $^{\circ}$ C. The effect of Sr content on the device performance of the SrZTO TFTs was investigated, where Sr was changed from 0 to 20%. With increasing Sr concentration, threshold voltage shifted to the positive voltage, since the incorporation of Sr reduces the density of oxygen vacancy in ZTO. The mobility increases and threshold voltage shift to positive voltage with increasing Sr, and a 5% Sr doped ZTO transistor with AlO $_{\rm x}$ gate insulator exhibited the field effect mobility of 7.82 cm $^{2}/{{V}}{\cdot}{{s}}$ , subthreshold swing of 121 mV/dec, and threshold voltage of 0.71 V . It is found that the threshold voltage shifts by negative bias illumination stress decrease with increasing Sr.

© 2014 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription