Abstract
This paper reports an InGaZnO thin-film transistor (TFT) that involves
using fully room-temperature gate dielectrics on a flexible substrate. The
wide bandgap dielectrics of
${{HfO}}_{2}$
and
${{Y}}_{2}{{O}}_{3}$
exhibited favorable adhesion properties on a flexible substrate
compared with conventional low-
$\kappa$
${{SiO}}_{2}$
film. Based on the experimental results, the room-temperature
${{ IGZO/HfO}}_{2}$
TFTs
demonstrated effective device integrity, and achieve a low drive voltage of
$< {{2}}$
V,
a low threshold voltage of
${{0.46}}
\pm {{006}}$
V, a low sub-threshold swing of
${{110}} \pm {{6}}$
mV/decade and an extremely high mobility of
${{60.2}} \pm {{32}}$
cm
$^{2}/{{V}}\cdot{{s}}$
. The excellent performance of this TFT indicated that it demonstrates
considerable potential for active-matrix liquid crystal display applications
requiring low power consumption and a high driving current.
© 2014 IEEE
PDF Article
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