Abstract

In this paper, a novel voltage-programmed pixel circuit based on amorphous indium-gallium-zinc-oxide thin film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting diode (AMOLED) displays with the enhanced aperture ratio is proposed. The proposed circuit consists of 5 TFTs and one capacitor. Through extensive simulation and layout works, we verified the proposed circuit compensates for the variation of the threshold voltage in a variety of harsh stress conditions. In addition, by removing one storage capacitor and one signal line, the proposed circuit can increase the aperture ratio as well as decrease the complexity of circuit operation in comparison to the conventional pixel circuit.

© 2013 IEEE

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  1. R. L. Hoffman, B. J. Norris, J. F. Wager, "ZnO-based transparent thin-film transistors," Appl. Phys. Lett. 82, 733-735 (2003).
  2. K. Nomura 1, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).
  3. T. –C. Fung, A. Katsumi, H. Kumomi, J. Kanicki, "Electrical instability of RF sputter amorphous In–Ga–Zn–O thin-film transistors," J. Disp. Technol. 5, 452-461 (2009).
  4. W. Lim, S. H. Kim, Y. L. Wang, J. W. Lee, D. P. Norton, S. J. Pearton, F. Ren, I. I. Kravchenko, "Stable room temperature deposited amorphous ${{InGaZnO}}_{4}$ thin film transistors," J. Vac. Sci. Technol. B 26, 959 (2008).
  5. J. S. Yoo, H. Lee, J. Kanicki, C.-D. Kim, I.-J. Chung, "Novel a-Si:H TFT pixel circuit for electrically stable top-anode light-emitting AMOLEDs," J. SID 15/8, 545-551 (2007).
  6. C. Chen, K. Abe, T.-C. Fung, H. Kumomi, J. Kanicki, "Amorphous In–Ga–Zn–O thin film transistor current-scaling pixel electrode circuit for active-matrix organic light-emitting displays," Jap. J. Appl. Phys. 48, 03B025-1-03B025-7 (2009).
  7. H. Lee, J. S. Yoo, C.-D. Kim, I.-J. Chung, J. Kanicki, "Novel current-scaling current-mirror hydrogenated amorphous silicon thin-film transistor pixel electrode circuit with cascade capacitor for active-matrix organic light-emitting devices," Jpn. J. Appl. Phys. 46, 1343-1349.
  8. T.-C. Fung, K. Abe, H. Kumomi, J. Kanicki, "Electrical instability of RF sputter amorphous In–Ga–Zn–O thin-film transistors," J. Display Technol. 5, 452-461 (2009).
  9. C. Chen, K. Abe, H. Kumomi, J. Kumomi, J. Kanicki, "Current temperature stress study of RF sputter a-InGaZnO TFTs," 28th Int. Display Res. Conf. (IDRC) Conf. Rec. (2008) pp. 104-107.
  10. P. Migliorato, M. D. H. Chowdhury, J. Um, M. Seok, J. Jang, "Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor," Appl. Phys. Lett. 101, 123502 (2012).
  11. W.-T. Chen, H.-W. Hsueh, H.-W. Zan, C.-C. Tsai, "Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors," Electrochem. Solid-State Lett. 14, H297 (2011).
  12. C. Chen, K. Abe, H. Kumomi, J. Kanicki, "A-InGaZnO thin-film transistors for AMOLEDs: Electrical stability and pixel-circuit," J. SID 17, 525-34 (2009).

2012 (1)

P. Migliorato, M. D. H. Chowdhury, J. Um, M. Seok, J. Jang, "Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor," Appl. Phys. Lett. 101, 123502 (2012).

2011 (1)

W.-T. Chen, H.-W. Hsueh, H.-W. Zan, C.-C. Tsai, "Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors," Electrochem. Solid-State Lett. 14, H297 (2011).

2009 (4)

C. Chen, K. Abe, H. Kumomi, J. Kanicki, "A-InGaZnO thin-film transistors for AMOLEDs: Electrical stability and pixel-circuit," J. SID 17, 525-34 (2009).

C. Chen, K. Abe, T.-C. Fung, H. Kumomi, J. Kanicki, "Amorphous In–Ga–Zn–O thin film transistor current-scaling pixel electrode circuit for active-matrix organic light-emitting displays," Jap. J. Appl. Phys. 48, 03B025-1-03B025-7 (2009).

T.-C. Fung, K. Abe, H. Kumomi, J. Kanicki, "Electrical instability of RF sputter amorphous In–Ga–Zn–O thin-film transistors," J. Display Technol. 5, 452-461 (2009).

T. –C. Fung, A. Katsumi, H. Kumomi, J. Kanicki, "Electrical instability of RF sputter amorphous In–Ga–Zn–O thin-film transistors," J. Disp. Technol. 5, 452-461 (2009).

2008 (1)

W. Lim, S. H. Kim, Y. L. Wang, J. W. Lee, D. P. Norton, S. J. Pearton, F. Ren, I. I. Kravchenko, "Stable room temperature deposited amorphous ${{InGaZnO}}_{4}$ thin film transistors," J. Vac. Sci. Technol. B 26, 959 (2008).

2007 (1)

J. S. Yoo, H. Lee, J. Kanicki, C.-D. Kim, I.-J. Chung, "Novel a-Si:H TFT pixel circuit for electrically stable top-anode light-emitting AMOLEDs," J. SID 15/8, 545-551 (2007).

2004 (1)

K. Nomura 1, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

2003 (1)

R. L. Hoffman, B. J. Norris, J. F. Wager, "ZnO-based transparent thin-film transistors," Appl. Phys. Lett. 82, 733-735 (2003).

Appl. Phys. Lett. (2)

R. L. Hoffman, B. J. Norris, J. F. Wager, "ZnO-based transparent thin-film transistors," Appl. Phys. Lett. 82, 733-735 (2003).

P. Migliorato, M. D. H. Chowdhury, J. Um, M. Seok, J. Jang, "Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor," Appl. Phys. Lett. 101, 123502 (2012).

Electrochem. Solid-State Lett. (1)

W.-T. Chen, H.-W. Hsueh, H.-W. Zan, C.-C. Tsai, "Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors," Electrochem. Solid-State Lett. 14, H297 (2011).

J. Display Technol. (1)

T.-C. Fung, K. Abe, H. Kumomi, J. Kanicki, "Electrical instability of RF sputter amorphous In–Ga–Zn–O thin-film transistors," J. Display Technol. 5, 452-461 (2009).

J. SID (2)

J. S. Yoo, H. Lee, J. Kanicki, C.-D. Kim, I.-J. Chung, "Novel a-Si:H TFT pixel circuit for electrically stable top-anode light-emitting AMOLEDs," J. SID 15/8, 545-551 (2007).

C. Chen, K. Abe, H. Kumomi, J. Kanicki, "A-InGaZnO thin-film transistors for AMOLEDs: Electrical stability and pixel-circuit," J. SID 17, 525-34 (2009).

J. Disp. Technol. (1)

T. –C. Fung, A. Katsumi, H. Kumomi, J. Kanicki, "Electrical instability of RF sputter amorphous In–Ga–Zn–O thin-film transistors," J. Disp. Technol. 5, 452-461 (2009).

J. Vac. Sci. Technol. B (1)

W. Lim, S. H. Kim, Y. L. Wang, J. W. Lee, D. P. Norton, S. J. Pearton, F. Ren, I. I. Kravchenko, "Stable room temperature deposited amorphous ${{InGaZnO}}_{4}$ thin film transistors," J. Vac. Sci. Technol. B 26, 959 (2008).

Jap. J. Appl. Phys. (1)

C. Chen, K. Abe, T.-C. Fung, H. Kumomi, J. Kanicki, "Amorphous In–Ga–Zn–O thin film transistor current-scaling pixel electrode circuit for active-matrix organic light-emitting displays," Jap. J. Appl. Phys. 48, 03B025-1-03B025-7 (2009).

Jpn. J. Appl. Phys. (1)

H. Lee, J. S. Yoo, C.-D. Kim, I.-J. Chung, J. Kanicki, "Novel current-scaling current-mirror hydrogenated amorphous silicon thin-film transistor pixel electrode circuit with cascade capacitor for active-matrix organic light-emitting devices," Jpn. J. Appl. Phys. 46, 1343-1349.

Nature (1)

K. Nomura 1, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432, 488-492 (2004).

Other (1)

C. Chen, K. Abe, H. Kumomi, J. Kumomi, J. Kanicki, "Current temperature stress study of RF sputter a-InGaZnO TFTs," 28th Int. Display Res. Conf. (IDRC) Conf. Rec. (2008) pp. 104-107.

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