Abstract

We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (Ith) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (Iop) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60°C with a TO-56 package.

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  1. X. Miao, D. Yum, Z. L. Brand, and H. DahlkampMethod and system for using light emission by a depth-sensing camera to capture video images under low-light conditionsU.S. Patent201810,009,554
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  6. Y. Yamagata, Y. Yamada, M. Muto, S. Sato, R. Nogawa, A. Sakamoto, and M. Yamaguchi915 nm high-power broad area laser diodes with ultra-small optical confinement based on Asymmetric Decoupled Confinement Heterostructure (ADCH)Proc. SPIE2015934893480F
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  10. T. Chan, S. H. Son, K. C. Kim, and T. G. KimDesign and simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH quantum dot laser diodeJ. Opt. Soc. Korea201115124127
  11. S. P. Abbasi and M. H. MahdiehAsymmetric, nonbroadened waveguide structures for double QW high-power 808 nm diode laserProc. SPIE2017102541025406
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  13. K. H. Schlereth and M. TackeThe complex propagation constant of multilayer waveguides: an algorithm for a personal computerIEEE J. Quantum Electron.199026627630
  14. I. K. Han, S. H. Cho, P. J. S. Heim, D. H. Woo, S. H. Kim, J. H. Song, F. G. Johnson, and M. DagenaisDependence of the light-current characteristics of 1.55-µm broad-area lasers on different p-doping profilesIEEE Photon. Technol. Lett.200012251253

Other (14)

X. Miao, D. Yum, Z. L. Brand, and H. DahlkampMethod and system for using light emission by a depth-sensing camera to capture video images under low-light conditionsU.S. Patent201810,009,554

R. K. Price, M. Bleyer, and D. DemandolxMulti-spectrum illumination-and-sensor module for head tracking, gesture recognition and spatial mappingU.S. Patent Appl.201815/447064

OSRAM Marketing IR APAC, Wide IR Illumination & Sensing Products from OSRAMConsumer Applications_ Illumination & Sensing2016Aprilhttp://www.ledtaiwan.org/zh/sites/ledtaiwan.org/files/data16/images/%281%29IR% 2BUV-S1-%20General%20Info%20Pack_Apr%272016.pdf2018

Lumentum Marketing IR, Diode Lasers in Next-Generation 3D Sensing Applications: Meeting the Challenges of Reliability and ScaleMARKETS_3D Sensing_ WHITE PAPER2018https://resource.lumentum.com/s3fs-public/technical-library-items/diodelaser3d-wp-cl-ae.pdf2018

C. T. Hung and T. C. Lu830-nm AlGaAs-InGaAs graded index double barrier separate confinement heterostructures laser diodes with improved temperature and divergence characteristicsIEEE J. Quantum Electron.201349127132

Y. Yamagata, Y. Yamada, M. Muto, S. Sato, R. Nogawa, A. Sakamoto, and M. Yamaguchi915 nm high-power broad area laser diodes with ultra-small optical confinement based on Asymmetric Decoupled Confinement Heterostructure (ADCH)Proc. SPIE2015934893480F

A. Knauer, G. Erbert, R. Staske, B. Sumpf, H. Wenzel, and M. WeyersHigh-power 808 nm lasers with a super-large optical cavitySemicond. Sci. Technol.200520621

A. Malag and B. MroziewiczVertical beam divergence of double-barrier multiquantum well (DBMQW) (AlGa)As heterostructure lasersJ. Lightwave Technol.19961415141518

G. Lin, S.-T. Yen, C.-P. Lee, and D.-C. LiuExtremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structureIEEE Photon. Technol. Lett.1996815881590

T. Chan, S. H. Son, K. C. Kim, and T. G. KimDesign and simulation of an 808 nm InAlAs/AlGaAs GRIN-SCH quantum dot laser diodeJ. Opt. Soc. Korea201115124127

S. P. Abbasi and M. H. MahdiehAsymmetric, nonbroadened waveguide structures for double QW high-power 808 nm diode laserProc. SPIE2017102541025406

D. Heo, I. K. Han, J. I. Lee, and J. JeongStudy on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructureIEEE Photon. Technol. Lett.20041618011803

K. H. Schlereth and M. TackeThe complex propagation constant of multilayer waveguides: an algorithm for a personal computerIEEE J. Quantum Electron.199026627630

I. K. Han, S. H. Cho, P. J. S. Heim, D. H. Woo, S. H. Kim, J. H. Song, F. G. Johnson, and M. DagenaisDependence of the light-current characteristics of 1.55-µm broad-area lasers on different p-doping profilesIEEE Photon. Technol. Lett.200012251253

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