Abstract

The influence of high-power laser diode (HPLD) emitter width on the device performance is investigated for 975-nm (In,Ga)(As,P)/(Al,Ga)As broad-area HPLDs, using self-consistent electro-thermal-optical simulation. To guarantee the simulation’s accuracy, simulated results are matched with the measured results for a sample HPLD with fitting parameters. The influences of HPLD emitter width on temperature distribution, output power, and the beam product parameter (BPP) are analyzed for three different emitter widths of 50, 70, and 90 µm. It is found that a device with smaller emitter width exhibits both thermal rollover and thermal blooming at lower output power, but smaller BPP.

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  1. Y. Jeong, J. K. Sahu, D. N. Payne, and J. NilssonYtterbium-doped large-core fiber laser with 1 kW continuous-wave output powerProc. Advanced Solid-State Photonics 2004Optical Society of AmericaNew Mexico, US2004paper PDP13
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  8. P. Crump, S. Bldicke, C. M. Schultz, H. Ekhteraei, H. Wenzel, and G. ErbertExperimental and theoretical analysis of the dominant lateral waveguiding mechanism in 975 nm high power broad area diode lasersSemicond. Sci. Technol.201227045001
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  11. C. J. Hages, A. Redinger, S. Levcenko, H. Hempel, M. J. Koeper, R. Agrawal, D. Greiner, C. A. Kaufmann, and T. UnoldIdentifying the real minority carrier lifetime in nonideal semiconductors: a case study of kesterite materialsAdv. Energy Mater.201771700167
  12. J. Piprek, J. K. White, and A. J. SpringThorpeWhat limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?IEEE J. Quantum Electron.20023812531259
  13. N. A. Pikhtin, S. O. Slipchenko, I. S. Shashkin, M. A. Ladugin, A. A. Marmalyuk, A. A. Podoskin, and I. S. TarasovThe temperature dependence of internal optical losses in semiconductor lasers (λ = 900-920 nm)Semiconductors20104413651369
  14. A. Bachmann, C. Lauer, M. Furitsch, H. Knig, M. Mller, and U. StrauRecent brightness improvements of 976 nm high power laser barsProc. SPIE2017100861008602

Other (14)

Y. Jeong, J. K. Sahu, D. N. Payne, and J. NilssonYtterbium-doped large-core fiber laser with 1 kW continuous-wave output powerProc. Advanced Solid-State Photonics 2004Optical Society of AmericaNew Mexico, US2004paper PDP13

Y. Jeong, J. K. Sahu, D. N. Payne, and J. NilssonYtterbium-doped large-core fiber laser with 1.36 kW continuous-wave output powerOpt. Express20041260886092

A. Liu, M. A. Norsen, and R. D. Mead60-W green output by frequency doubling of a polarized Yb-doped fiber laserOpt. Lett.2005306769

L. Zhong and X. MaP. PredeepOptoelectronics - Devices and ApplicationsInTechLondon, UK2011325348Recent developments in high power semiconductor diode lasers, Chapter 16

V. Gapontsev, N. Moshegov, I. Berezin, A. Komissarov, P. Trubenko, D. Miftakhutdinov, I. Berishev, V. Chuyanov, O. Raisky, and A. OvtchinnikovHighly-efficient high-power pumps for fiber lasersProc. SPIE2017100861008604

A. V. Aluev, A. M. Morozyuk, M. S. Kobyakova, and A. A. Chel’nyiHigh-power 2.5-W cw AlGaAs/GaAs laser diodesQuantum Electron.200131627628

J. PiprekSelf-consistent far-field blooming analysis for high-power Fabry-Perot laser diodesProc. SPIE20138619861910

P. Crump, S. Bldicke, C. M. Schultz, H. Ekhteraei, H. Wenzel, and G. ErbertExperimental and theoretical analysis of the dominant lateral waveguiding mechanism in 975 nm high power broad area diode lasersSemicond. Sci. Technol.201227045001

PICS3DCrosslight Software Inc.2016[Online]. Available: http://www.crosslight.com

S.-S. Beyertt, M. Zorn, T. Kübler, H. Wenzel, M. Weyers, A. Giesen, G. Tränkle, and U. BrauchOptical in-well pumping of a semiconductor disk laser with high optical efficiencyIEEE J. Quantum Electron.20054114391449

C. J. Hages, A. Redinger, S. Levcenko, H. Hempel, M. J. Koeper, R. Agrawal, D. Greiner, C. A. Kaufmann, and T. UnoldIdentifying the real minority carrier lifetime in nonideal semiconductors: a case study of kesterite materialsAdv. Energy Mater.201771700167

J. Piprek, J. K. White, and A. J. SpringThorpeWhat limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?IEEE J. Quantum Electron.20023812531259

N. A. Pikhtin, S. O. Slipchenko, I. S. Shashkin, M. A. Ladugin, A. A. Marmalyuk, A. A. Podoskin, and I. S. TarasovThe temperature dependence of internal optical losses in semiconductor lasers (λ = 900-920 nm)Semiconductors20104413651369

A. Bachmann, C. Lauer, M. Furitsch, H. Knig, M. Mller, and U. StrauRecent brightness improvements of 976 nm high power laser barsProc. SPIE2017100861008602

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