Abstract

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

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  1. E. F. Schubert and J. K. KimSolid-state light sources getting smartScience200530812741278
  2. S. P. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C.-C. Pan, C.-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J. S. Speck, and S. NakamuraDevelopment of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displaysActa Mater.201361945951
  3. C. J. Raymond and Z. LiPhotoluminescence metrology for LED characterization in high volume manufacturingProc. SPIE2013868186810P
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  14. S.-H. Lim, Y.-H. Ko, and Y.-H. ChoA quantitative method for determination of carrier escape efficiency in GaN-based light-emitting diodes: A comparison of open- and short-circuit photoluminescenceAppl. Phys. Lett.2014104091104
  15. M. F. Schubert, Q. Dai, J. Xu, J. K. Kim, and E. F. SchubertElectroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodesAppl. Phys. Lett.200995191105
  16. Y. Sun, H. Guo, L. Jin, Y.-H. Cho, E.-K. Suh, H. J. Lee, R. J. Choi, and Y. B. HahnOptical excitation study on the efficiency droop behaviors of InGaN/GaN multiple-quantum-well structuresAppl. Phys. B2014114551555
  17. K.-S. Kim, D.-P. Han, H.-S. Kim, and J.-I. ShimAnalysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodesAppl. Phys. Lett.2014104091110
  18. I. Mártil, E. Redondo, and A. OjedaInfluence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III-V nitridesJ. Appl. Phys.1997812442
  19. T. Kohno, Y. Sudo, M. Yamauchi, K. Mitsui, H. Kudo, H. Okagawa, and Y. YamadaInternal quantum efficiency and nonradiative recombination rate in InGaN-based near-ultraviolet light-emitting diodesJpn. J. Appl. Phys.201251072102
  20. Q. Wang, Z.-W. Ji, F. Wang, Q. Mu, Y.-J. Zheng, X.-G. Xu, Y.-J. Lü, and Z.-H. FengInfluence of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wellsChin. Phys. B201524024219
  21. E. F. SchubertLight-Emitting Diodes2nd ed.Cambridge University PressCambridge, UK2006Chapter 4
  22. H. Masui, H. Sato, H. Asamizu, M. C. Schmidt, N. N. Fellows, S. Nakamura, and S. P. DenbaarsRadiative recombination efficiency of InGaN-based light-emitting diodes evaluated at various temperatures and injection currentsJpn. J. Appl. Phys.200746L627L629

Other (22)

E. F. Schubert and J. K. KimSolid-state light sources getting smartScience200530812741278

S. P. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C.-C. Pan, C.-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J. S. Speck, and S. NakamuraDevelopment of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displaysActa Mater.201361945951

C. J. Raymond and Z. LiPhotoluminescence metrology for LED characterization in high volume manufacturingProc. SPIE2013868186810P

Y. H. Aliyu, D. V. Morgan, and H. ThomasA luminescence mapping technique for rapid evaluation of visible-light-emitting materials used in semiconductor light-emitting diodesMeas. Sci. Technol.19978437440

H. Masui, S. Nakamura, and S. P. DenBaarsExperimental technique to correlate optical excitation intensities with electrical excitation intensities for semiconductor optoelectronic device characterizationSemicond. Sci. Technol.200823085108

L. Li, P. Li, Y. Wen, J. Wen, and Y. ZhuTemperature dependences of photoluminescence and electroluminescence spectra in light-emitting diodesAppl. Phys. Lett.200994261103

A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. HahnHigh-power and high-efficiency InGaN-based light emittersIEEE Trans. Electron Devices2010577987

W.-A. Quitsch, D. Sager, M. Loewenich, T. Meyer, B. Hahn, and G. BacherLow injection losses in InGaN/GaN LEDs: The correlation of photoluminescence, electroluminescence, and photocurrent measurementsJ. Appl. Phys.2018123214502

H. MasuiDiode ideality factor in modern light-emitting diodesSemicond. Sci. Technol.201126075011

J.-H. Ham, C.-H. Oh, D.-P. Han, H. Kim, J.-I. Shim, D.-S. Shin, and K.-S. KimStudy of the ideality factor of blue light-emitting diodes using the photovoltaic characteristicsProc. 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)Korea2015Aug.paper 26P_106

H.-J. Kim, G.-H. Ryu, W.-B. Yang, and H.-Y. RyuIdeality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristicsJ. Korean Phys. Soc.20146516391643

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, and J. S. LeeOrigin of forward leakage current in GaN-based light-emitting devicesAppl. Phys. Lett.200689132117

J. Kim, H. Kim, S. Kim, H. Jeong, I. Cho, M. Noh, H. Jung, and K. JinProperties of defective regions observed by photoluminescence imaging for GaN-based light-emitting diode epi-wafersJ. Opt. Soc. Korea201519687694

S.-H. Lim, Y.-H. Ko, and Y.-H. ChoA quantitative method for determination of carrier escape efficiency in GaN-based light-emitting diodes: A comparison of open- and short-circuit photoluminescenceAppl. Phys. Lett.2014104091104

M. F. Schubert, Q. Dai, J. Xu, J. K. Kim, and E. F. SchubertElectroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodesAppl. Phys. Lett.200995191105

Y. Sun, H. Guo, L. Jin, Y.-H. Cho, E.-K. Suh, H. J. Lee, R. J. Choi, and Y. B. HahnOptical excitation study on the efficiency droop behaviors of InGaN/GaN multiple-quantum-well structuresAppl. Phys. B2014114551555

K.-S. Kim, D.-P. Han, H.-S. Kim, and J.-I. ShimAnalysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodesAppl. Phys. Lett.2014104091110

I. Mártil, E. Redondo, and A. OjedaInfluence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III-V nitridesJ. Appl. Phys.1997812442

T. Kohno, Y. Sudo, M. Yamauchi, K. Mitsui, H. Kudo, H. Okagawa, and Y. YamadaInternal quantum efficiency and nonradiative recombination rate in InGaN-based near-ultraviolet light-emitting diodesJpn. J. Appl. Phys.201251072102

Q. Wang, Z.-W. Ji, F. Wang, Q. Mu, Y.-J. Zheng, X.-G. Xu, Y.-J. Lü, and Z.-H. FengInfluence of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wellsChin. Phys. B201524024219

E. F. SchubertLight-Emitting Diodes2nd ed.Cambridge University PressCambridge, UK2006Chapter 4

H. Masui, H. Sato, H. Asamizu, M. C. Schmidt, N. N. Fellows, S. Nakamura, and S. P. DenbaarsRadiative recombination efficiency of InGaN-based light-emitting diodes evaluated at various temperatures and injection currentsJpn. J. Appl. Phys.200746L627L629

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