Abstract

In this study, we present a detailed investigation of luminescence properties of a blue light-emitting diode using InGaN/GaN (indium component is 17.43%) multiple quantum wells as the active region grown on patterned sapphire substrate by low-pressure metal-organic chemical vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman scattering (RS) and photoluminescence (PL) measurements are employed to study the crystal quality, the threading dislocation density, surface morphology, residual strain existing in the active region and optical properties. We conclude that the crystalline quality and surface morphology can be greatly improved, the red-shift of peak wavelength is eliminated and the superior blue light LED can be obtained because the residual strain that existed in the active region can be relaxed when the LED is grown on patterned sapphire substrate (PSS). We discuss the mechanisms of growing on PSS to enhance the superior luminescence properties of blue light LED from the viewpoint of residual strain in the active region.

© 2017 Optical Society of Korea

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  1. T. Jiang, S. R. Xu, J. C. Zhang, Y. Xie, Y. Hao, "Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire," Sci. Rep. 6, 19955 (2016)
    [Crossref]
  2. D. H. Wang, Y. Hao, S. R. Xu, T. H. Xu, D. C. Wang, T. Z. Yao, Y. N. Zhang, "Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates," J. Alloys Compd. 555, 311‒314 (2013)
    [Crossref]
  3. S. R. Xu, Y. Hao, J. C. Zhang, T. Jiang, L. A. Yang, X. L. Lu, Z. Y. Lin, "Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition," Nano Lett. 13, 3654‒3657 (2013)
    [Crossref]
  4. D.-H. Wang, T.-H. Xu, "Investigation on HT-AlN nucleation layers and AlGaN epifilms inserting LT-AlN nucleation layer on c-plane sapphire substrate," J. Opt. Soc. Korea 20, 125‒129 (2016)
    [Crossref]
  5. T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, S. Olson, "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition," J. Cryst. Growth 310, 2514‒2519 (2008)
    [Crossref]
  6. S. R. Xu, P. X. Li, J. C. Zhang, T. Jiang, J. J. Ma, Z. Y. Lin, Y. Hao, "Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate," J. Alloys Compd. 614, 360‒363 (2014)
    [Crossref]
  7. U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter, "Growth of AlxGa1-xN-layers on planar and patterned substrates," J. Cryst. Growth 272, 506‒514 (2004)
    [Crossref]
  8. S. R. Xu, Y. Hao, J. C. Zhang, Y. R. Cao, X. W. Zhou, L. A. Yang, X. X. Ou, K. Chen, W. Mao, "Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition," J. Cryst. Growth 312, 3521 (2010)
    [Crossref]
  9. D. H. Wang, H. Zhou, J. C. Zhang, S. R. Xu, L. X. Zhang, F. N. Meng, S. Ai, Y. Hao, "Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate," Sci. China: Phys., Mech. Astron. 55, 2383‒2388 (2012)
    [Crossref]
  10. M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, J. M. Zhou, "Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices," J. Cryst. Growth 310, 1088‒1092 (2008)
    [Crossref]
  11. A. Hushur, M. H. Manghnani, J. Narayan, "Raman studies of GaN/sapphire thin film heterostructures," J. Appl. Phys. 106, 54317 (2009)
    [Crossref]
  12. G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)
  13. H. C. Lin, Z. C. Feng, M. S. Chen, Z. X. Shen, I. T. Ferguson, W. J. Lu, "Raman scattering study on anisotropic property of wurtzite GaN," J. Appl. Phys. 105, 036102 (2009)
    [Crossref]
  14. G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers, "Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering," J. Mater Sci.: Mater Electron. 19, S51 (2008)
  15. V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)
  16. D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, I. Akasaki, "Free exciton emission in GaN," Phys. Review B 54, 2518‒2522 (1996)
    [Crossref]

2016 (2)

T. Jiang, S. R. Xu, J. C. Zhang, Y. Xie, Y. Hao, "Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire," Sci. Rep. 6, 19955 (2016)
[Crossref]

D.-H. Wang, T.-H. Xu, "Investigation on HT-AlN nucleation layers and AlGaN epifilms inserting LT-AlN nucleation layer on c-plane sapphire substrate," J. Opt. Soc. Korea 20, 125‒129 (2016)
[Crossref]

2014 (1)

S. R. Xu, P. X. Li, J. C. Zhang, T. Jiang, J. J. Ma, Z. Y. Lin, Y. Hao, "Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate," J. Alloys Compd. 614, 360‒363 (2014)
[Crossref]

2013 (2)

D. H. Wang, Y. Hao, S. R. Xu, T. H. Xu, D. C. Wang, T. Z. Yao, Y. N. Zhang, "Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates," J. Alloys Compd. 555, 311‒314 (2013)
[Crossref]

S. R. Xu, Y. Hao, J. C. Zhang, T. Jiang, L. A. Yang, X. L. Lu, Z. Y. Lin, "Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition," Nano Lett. 13, 3654‒3657 (2013)
[Crossref]

2012 (1)

D. H. Wang, H. Zhou, J. C. Zhang, S. R. Xu, L. X. Zhang, F. N. Meng, S. Ai, Y. Hao, "Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate," Sci. China: Phys., Mech. Astron. 55, 2383‒2388 (2012)
[Crossref]

2010 (1)

S. R. Xu, Y. Hao, J. C. Zhang, Y. R. Cao, X. W. Zhou, L. A. Yang, X. X. Ou, K. Chen, W. Mao, "Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition," J. Cryst. Growth 312, 3521 (2010)
[Crossref]

2009 (2)

A. Hushur, M. H. Manghnani, J. Narayan, "Raman studies of GaN/sapphire thin film heterostructures," J. Appl. Phys. 106, 54317 (2009)
[Crossref]

H. C. Lin, Z. C. Feng, M. S. Chen, Z. X. Shen, I. T. Ferguson, W. J. Lu, "Raman scattering study on anisotropic property of wurtzite GaN," J. Appl. Phys. 105, 036102 (2009)
[Crossref]

2008 (3)

G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers, "Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering," J. Mater Sci.: Mater Electron. 19, S51 (2008)

M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, J. M. Zhou, "Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices," J. Cryst. Growth 310, 1088‒1092 (2008)
[Crossref]

T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, S. Olson, "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition," J. Cryst. Growth 310, 2514‒2519 (2008)
[Crossref]

2007 (1)

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

2004 (1)

U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter, "Growth of AlxGa1-xN-layers on planar and patterned substrates," J. Cryst. Growth 272, 506‒514 (2004)
[Crossref]

2002 (1)

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

1996 (1)

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, I. Akasaki, "Free exciton emission in GaN," Phys. Review B 54, 2518‒2522 (1996)
[Crossref]

Ai, S.

D. H. Wang, H. Zhou, J. C. Zhang, S. R. Xu, L. X. Zhang, F. N. Meng, S. Ai, Y. Hao, "Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate," Sci. China: Phys., Mech. Astron. 55, 2383‒2388 (2012)
[Crossref]

Akasaki, I.

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, I. Akasaki, "Free exciton emission in GaN," Phys. Review B 54, 2518‒2522 (1996)
[Crossref]

Amano, H.

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, I. Akasaki, "Free exciton emission in GaN," Phys. Review B 54, 2518‒2522 (1996)
[Crossref]

Arwin, H.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Averboukh, B.

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, I. Akasaki, "Free exciton emission in GaN," Phys. Review B 54, 2518‒2522 (1996)
[Crossref]

Banas, M.

T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, S. Olson, "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition," J. Cryst. Growth 310, 2514‒2519 (2008)
[Crossref]

Bläsing, J.

U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter, "Growth of AlxGa1-xN-layers on planar and patterned substrates," J. Cryst. Growth 272, 506‒514 (2004)
[Crossref]

Brumme, T.

G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers, "Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering," J. Mater Sci.: Mater Electron. 19, S51 (2008)

Cao, Y. R.

S. R. Xu, Y. Hao, J. C. Zhang, Y. R. Cao, X. W. Zhou, L. A. Yang, X. X. Ou, K. Chen, W. Mao, "Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition," J. Cryst. Growth 312, 3521 (2010)
[Crossref]

Chen, H.

M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, J. M. Zhou, "Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices," J. Cryst. Growth 310, 1088‒1092 (2008)
[Crossref]

Chen, K.

S. R. Xu, Y. Hao, J. C. Zhang, Y. R. Cao, X. W. Zhou, L. A. Yang, X. X. Ou, K. Chen, W. Mao, "Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition," J. Cryst. Growth 312, 3521 (2010)
[Crossref]

Chen, M. S.

H. C. Lin, Z. C. Feng, M. S. Chen, Z. X. Shen, I. T. Ferguson, W. J. Lu, "Raman scattering study on anisotropic property of wurtzite GaN," J. Appl. Phys. 105, 036102 (2009)
[Crossref]

Chen, Z. Z.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Crawford, M.

T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, S. Olson, "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition," J. Cryst. Growth 310, 2514‒2519 (2008)
[Crossref]

Darakchieva, V.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Ding, X. M.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Ecke, G.

U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter, "Growth of AlxGa1-xN-layers on planar and patterned substrates," J. Cryst. Growth 272, 506‒514 (2004)
[Crossref]

Feng, Z. C.

H. C. Lin, Z. C. Feng, M. S. Chen, Z. X. Shen, I. T. Ferguson, W. J. Lu, "Raman scattering study on anisotropic property of wurtzite GaN," J. Appl. Phys. 105, 036102 (2009)
[Crossref]

Ferguson, I. T.

H. C. Lin, Z. C. Feng, M. S. Chen, Z. X. Shen, I. T. Ferguson, W. J. Lu, "Raman scattering study on anisotropic property of wurtzite GaN," J. Appl. Phys. 105, 036102 (2009)
[Crossref]

Fini, P.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Fuhrmann, D.

U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter, "Growth of AlxGa1-xN-layers on planar and patterned substrates," J. Cryst. Growth 272, 506‒514 (2004)
[Crossref]

Gan, Z. Z.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Greve, M.

U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter, "Growth of AlxGa1-xN-layers on planar and patterned substrates," J. Cryst. Growth 272, 506‒514 (2004)
[Crossref]

Guo, L. W.

M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, J. M. Zhou, "Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices," J. Cryst. Growth 310, 1088‒1092 (2008)
[Crossref]

Hangleiter, A.

U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter, "Growth of AlxGa1-xN-layers on planar and patterned substrates," J. Cryst. Growth 272, 506‒514 (2004)
[Crossref]

Hao, Y.

T. Jiang, S. R. Xu, J. C. Zhang, Y. Xie, Y. Hao, "Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire," Sci. Rep. 6, 19955 (2016)
[Crossref]

S. R. Xu, P. X. Li, J. C. Zhang, T. Jiang, J. J. Ma, Z. Y. Lin, Y. Hao, "Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate," J. Alloys Compd. 614, 360‒363 (2014)
[Crossref]

D. H. Wang, Y. Hao, S. R. Xu, T. H. Xu, D. C. Wang, T. Z. Yao, Y. N. Zhang, "Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates," J. Alloys Compd. 555, 311‒314 (2013)
[Crossref]

S. R. Xu, Y. Hao, J. C. Zhang, T. Jiang, L. A. Yang, X. L. Lu, Z. Y. Lin, "Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition," Nano Lett. 13, 3654‒3657 (2013)
[Crossref]

D. H. Wang, H. Zhou, J. C. Zhang, S. R. Xu, L. X. Zhang, F. N. Meng, S. Ai, Y. Hao, "Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate," Sci. China: Phys., Mech. Astron. 55, 2383‒2388 (2012)
[Crossref]

S. R. Xu, Y. Hao, J. C. Zhang, Y. R. Cao, X. W. Zhou, L. A. Yang, X. X. Ou, K. Chen, W. Mao, "Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition," J. Cryst. Growth 312, 3521 (2010)
[Crossref]

Haskell, B.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Herms, M.

G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers, "Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering," J. Mater Sci.: Mater Electron. 19, S51 (2008)

Heuken, M.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Hommel, D.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Hu, X. D.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Hushur, A.

A. Hushur, M. H. Manghnani, J. Narayan, "Raman studies of GaN/sapphire thin film heterostructures," J. Appl. Phys. 106, 54317 (2009)
[Crossref]

Irmer, G.

G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers, "Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering," J. Mater Sci.: Mater Electron. 19, S51 (2008)

Jia, H. Q.

M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, J. M. Zhou, "Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices," J. Cryst. Growth 310, 1088‒1092 (2008)
[Crossref]

Jiang, T.

T. Jiang, S. R. Xu, J. C. Zhang, Y. Xie, Y. Hao, "Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire," Sci. Rep. 6, 19955 (2016)
[Crossref]

S. R. Xu, P. X. Li, J. C. Zhang, T. Jiang, J. J. Ma, Z. Y. Lin, Y. Hao, "Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate," J. Alloys Compd. 614, 360‒363 (2014)
[Crossref]

S. R. Xu, Y. Hao, J. C. Zhang, T. Jiang, L. A. Yang, X. L. Lu, Z. Y. Lin, "Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition," Nano Lett. 13, 3654‒3657 (2013)
[Crossref]

Kneissl, M.

G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers, "Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering," J. Mater Sci.: Mater Electron. 19, S51 (2008)

Koleske, D.

T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, S. Olson, "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition," J. Cryst. Growth 310, 2514‒2519 (2008)
[Crossref]

Kovalev, D.

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, I. Akasaki, "Free exciton emission in GaN," Phys. Review B 54, 2518‒2522 (1996)
[Crossref]

Krost, A.

U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter, "Growth of AlxGa1-xN-layers on planar and patterned substrates," J. Cryst. Growth 272, 506‒514 (2004)
[Crossref]

Ladous, C.

T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, S. Olson, "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition," J. Cryst. Growth 310, 2514‒2519 (2008)
[Crossref]

Li, P. X.

S. R. Xu, P. X. Li, J. C. Zhang, T. Jiang, J. J. Ma, Z. Y. Lin, Y. Hao, "Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate," J. Alloys Compd. 614, 360‒363 (2014)
[Crossref]

Li, Z. H.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Lin, H. C.

H. C. Lin, Z. C. Feng, M. S. Chen, Z. X. Shen, I. T. Ferguson, W. J. Lu, "Raman scattering study on anisotropic property of wurtzite GaN," J. Appl. Phys. 105, 036102 (2009)
[Crossref]

Lin, Z. Y.

S. R. Xu, P. X. Li, J. C. Zhang, T. Jiang, J. J. Ma, Z. Y. Lin, Y. Hao, "Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate," J. Alloys Compd. 614, 360‒363 (2014)
[Crossref]

S. R. Xu, Y. Hao, J. C. Zhang, T. Jiang, L. A. Yang, X. L. Lu, Z. Y. Lin, "Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition," Nano Lett. 13, 3654‒3657 (2013)
[Crossref]

Liu, H. H.

M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, J. M. Zhou, "Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices," J. Cryst. Growth 310, 1088‒1092 (2008)
[Crossref]

Lu, M.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Lu, W. J.

H. C. Lin, Z. C. Feng, M. S. Chen, Z. X. Shen, I. T. Ferguson, W. J. Lu, "Raman scattering study on anisotropic property of wurtzite GaN," J. Appl. Phys. 105, 036102 (2009)
[Crossref]

Lu, X. L.

S. R. Xu, Y. Hao, J. C. Zhang, T. Jiang, L. A. Yang, X. L. Lu, Z. Y. Lin, "Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition," Nano Lett. 13, 3654‒3657 (2013)
[Crossref]

Ma, J. J.

S. R. Xu, P. X. Li, J. C. Zhang, T. Jiang, J. J. Ma, Z. Y. Lin, Y. Hao, "Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate," J. Alloys Compd. 614, 360‒363 (2014)
[Crossref]

Manghnani, M. H.

A. Hushur, M. H. Manghnani, J. Narayan, "Raman studies of GaN/sapphire thin film heterostructures," J. Appl. Phys. 106, 54317 (2009)
[Crossref]

Mao, W.

S. R. Xu, Y. Hao, J. C. Zhang, Y. R. Cao, X. W. Zhou, L. A. Yang, X. X. Ou, K. Chen, W. Mao, "Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition," J. Cryst. Growth 312, 3521 (2010)
[Crossref]

Meng, F. N.

D. H. Wang, H. Zhou, J. C. Zhang, S. R. Xu, L. X. Zhang, F. N. Meng, S. Ai, Y. Hao, "Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate," Sci. China: Phys., Mech. Astron. 55, 2383‒2388 (2012)
[Crossref]

Meyer, B. K.

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, I. Akasaki, "Free exciton emission in GaN," Phys. Review B 54, 2518‒2522 (1996)
[Crossref]

Monemar, B.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Nakamura, S.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Narayan, J.

A. Hushur, M. H. Manghnani, J. Narayan, "Raman studies of GaN/sapphire thin film heterostructures," J. Appl. Phys. 106, 54317 (2009)
[Crossref]

Off, J.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Olson, S.

T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, S. Olson, "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition," J. Cryst. Growth 310, 2514‒2519 (2008)
[Crossref]

Ou, X. X.

S. R. Xu, Y. Hao, J. C. Zhang, Y. R. Cao, X. W. Zhou, L. A. Yang, X. X. Ou, K. Chen, W. Mao, "Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition," J. Cryst. Growth 312, 3521 (2010)
[Crossref]

Park, Y.

T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, S. Olson, "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition," J. Cryst. Growth 310, 2514‒2519 (2008)
[Crossref]

Paskov, P.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Paskova, T.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Peng, M. Z.

M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, J. M. Zhou, "Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices," J. Cryst. Growth 310, 1088‒1092 (2008)
[Crossref]

Pinnington, T.

T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, S. Olson, "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition," J. Cryst. Growth 310, 2514‒2519 (2008)
[Crossref]

Qin, Z. X.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Riedel, N.

U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter, "Growth of AlxGa1-xN-layers on planar and patterned substrates," J. Cryst. Growth 272, 506‒514 (2004)
[Crossref]

Rossow, U.

U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter, "Growth of AlxGa1-xN-layers on planar and patterned substrates," J. Cryst. Growth 272, 506‒514 (2004)
[Crossref]

Russell, M.

T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, S. Olson, "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition," J. Cryst. Growth 310, 2514‒2519 (2008)
[Crossref]

Scholz, F.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Schubert, M.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Shen, Z. X.

H. C. Lin, Z. C. Feng, M. S. Chen, Z. X. Shen, I. T. Ferguson, W. J. Lu, "Raman scattering study on anisotropic property of wurtzite GaN," J. Appl. Phys. 105, 036102 (2009)
[Crossref]

Speck, J.

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN," Phys. Rev. B 5, 195217 (2007)

Thaler, G.

T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, S. Olson, "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition," J. Cryst. Growth 310, 2514‒2519 (2008)
[Crossref]

Tong, Y. Z.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Volm, D.

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, I. Akasaki, "Free exciton emission in GaN," Phys. Review B 54, 2518‒2522 (1996)
[Crossref]

Wang, D. C.

D. H. Wang, Y. Hao, S. R. Xu, T. H. Xu, D. C. Wang, T. Z. Yao, Y. N. Zhang, "Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates," J. Alloys Compd. 555, 311‒314 (2013)
[Crossref]

Wang, D. H.

D. H. Wang, Y. Hao, S. R. Xu, T. H. Xu, D. C. Wang, T. Z. Yao, Y. N. Zhang, "Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates," J. Alloys Compd. 555, 311‒314 (2013)
[Crossref]

D. H. Wang, H. Zhou, J. C. Zhang, S. R. Xu, L. X. Zhang, F. N. Meng, S. Ai, Y. Hao, "Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate," Sci. China: Phys., Mech. Astron. 55, 2383‒2388 (2012)
[Crossref]

Wang, D.-H.

Wernicke, T.

G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers, "Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering," J. Mater Sci.: Mater Electron. 19, S51 (2008)

Weyers, M.

G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers, "Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering," J. Mater Sci.: Mater Electron. 19, S51 (2008)

Xie, Y.

T. Jiang, S. R. Xu, J. C. Zhang, Y. Xie, Y. Hao, "Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire," Sci. Rep. 6, 19955 (2016)
[Crossref]

Xu, S. R.

T. Jiang, S. R. Xu, J. C. Zhang, Y. Xie, Y. Hao, "Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire," Sci. Rep. 6, 19955 (2016)
[Crossref]

S. R. Xu, P. X. Li, J. C. Zhang, T. Jiang, J. J. Ma, Z. Y. Lin, Y. Hao, "Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate," J. Alloys Compd. 614, 360‒363 (2014)
[Crossref]

D. H. Wang, Y. Hao, S. R. Xu, T. H. Xu, D. C. Wang, T. Z. Yao, Y. N. Zhang, "Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates," J. Alloys Compd. 555, 311‒314 (2013)
[Crossref]

S. R. Xu, Y. Hao, J. C. Zhang, T. Jiang, L. A. Yang, X. L. Lu, Z. Y. Lin, "Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition," Nano Lett. 13, 3654‒3657 (2013)
[Crossref]

D. H. Wang, H. Zhou, J. C. Zhang, S. R. Xu, L. X. Zhang, F. N. Meng, S. Ai, Y. Hao, "Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate," Sci. China: Phys., Mech. Astron. 55, 2383‒2388 (2012)
[Crossref]

S. R. Xu, Y. Hao, J. C. Zhang, Y. R. Cao, X. W. Zhou, L. A. Yang, X. X. Ou, K. Chen, W. Mao, "Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition," J. Cryst. Growth 312, 3521 (2010)
[Crossref]

Xu, T. H.

D. H. Wang, Y. Hao, S. R. Xu, T. H. Xu, D. C. Wang, T. Z. Yao, Y. N. Zhang, "Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates," J. Alloys Compd. 555, 311‒314 (2013)
[Crossref]

Xu, T.-H.

Yan, J. F.

M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, J. M. Zhou, "Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices," J. Cryst. Growth 310, 1088‒1092 (2008)
[Crossref]

Yang, C. F.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Yang, L. A.

S. R. Xu, Y. Hao, J. C. Zhang, T. Jiang, L. A. Yang, X. L. Lu, Z. Y. Lin, "Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition," Nano Lett. 13, 3654‒3657 (2013)
[Crossref]

S. R. Xu, Y. Hao, J. C. Zhang, Y. R. Cao, X. W. Zhou, L. A. Yang, X. X. Ou, K. Chen, W. Mao, "Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition," J. Cryst. Growth 312, 3521 (2010)
[Crossref]

Yang, Z. J.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Yao, T. Z.

D. H. Wang, Y. Hao, S. R. Xu, T. H. Xu, D. C. Wang, T. Z. Yao, Y. N. Zhang, "Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates," J. Alloys Compd. 555, 311‒314 (2013)
[Crossref]

Yu, N. S.

M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, J. M. Zhou, "Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices," J. Cryst. Growth 310, 1088‒1092 (2008)
[Crossref]

Yu, T. J.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Zahler, J.

T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, S. Olson, "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition," J. Cryst. Growth 310, 2514‒2519 (2008)
[Crossref]

Zhang, G. Y.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Zhang, J.

M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, J. M. Zhou, "Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices," J. Cryst. Growth 310, 1088‒1092 (2008)
[Crossref]

Zhang, J. C.

T. Jiang, S. R. Xu, J. C. Zhang, Y. Xie, Y. Hao, "Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire," Sci. Rep. 6, 19955 (2016)
[Crossref]

S. R. Xu, P. X. Li, J. C. Zhang, T. Jiang, J. J. Ma, Z. Y. Lin, Y. Hao, "Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate," J. Alloys Compd. 614, 360‒363 (2014)
[Crossref]

S. R. Xu, Y. Hao, J. C. Zhang, T. Jiang, L. A. Yang, X. L. Lu, Z. Y. Lin, "Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition," Nano Lett. 13, 3654‒3657 (2013)
[Crossref]

D. H. Wang, H. Zhou, J. C. Zhang, S. R. Xu, L. X. Zhang, F. N. Meng, S. Ai, Y. Hao, "Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate," Sci. China: Phys., Mech. Astron. 55, 2383‒2388 (2012)
[Crossref]

S. R. Xu, Y. Hao, J. C. Zhang, Y. R. Cao, X. W. Zhou, L. A. Yang, X. X. Ou, K. Chen, W. Mao, "Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition," J. Cryst. Growth 312, 3521 (2010)
[Crossref]

Zhang, L.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Zhang, L. X.

D. H. Wang, H. Zhou, J. C. Zhang, S. R. Xu, L. X. Zhang, F. N. Meng, S. Ai, Y. Hao, "Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate," Sci. China: Phys., Mech. Astron. 55, 2383‒2388 (2012)
[Crossref]

Zhang, Y. N.

D. H. Wang, Y. Hao, S. R. Xu, T. H. Xu, D. C. Wang, T. Z. Yao, Y. N. Zhang, "Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates," J. Alloys Compd. 555, 311‒314 (2013)
[Crossref]

Zhao, Y.

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, C. F. Yang, "InGaN/GaN MQW high brightness LED grown by MOCVD," Opt. Mater. 23, 183‒186 (2002)

Zhou, H.

D. H. Wang, H. Zhou, J. C. Zhang, S. R. Xu, L. X. Zhang, F. N. Meng, S. Ai, Y. Hao, "Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate," Sci. China: Phys., Mech. Astron. 55, 2383‒2388 (2012)
[Crossref]

Zhou, J. M.

M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, J. M. Zhou, "Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices," J. Cryst. Growth 310, 1088‒1092 (2008)
[Crossref]

Zhou, X. W.

S. R. Xu, Y. Hao, J. C. Zhang, Y. R. Cao, X. W. Zhou, L. A. Yang, X. X. Ou, K. Chen, W. Mao, "Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition," J. Cryst. Growth 312, 3521 (2010)
[Crossref]

Zhu, X. L.

M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, J. M. Zhou, "Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices," J. Cryst. Growth 310, 1088‒1092 (2008)
[Crossref]

J. Alloys Compd. (2)

D. H. Wang, Y. Hao, S. R. Xu, T. H. Xu, D. C. Wang, T. Z. Yao, Y. N. Zhang, "Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates," J. Alloys Compd. 555, 311‒314 (2013)
[Crossref]

S. R. Xu, P. X. Li, J. C. Zhang, T. Jiang, J. J. Ma, Z. Y. Lin, Y. Hao, "Threading dislocation annihilation in the GaN layer on cone patterned sapphire substrate," J. Alloys Compd. 614, 360‒363 (2014)
[Crossref]

J. Appl. Phys. (2)

A. Hushur, M. H. Manghnani, J. Narayan, "Raman studies of GaN/sapphire thin film heterostructures," J. Appl. Phys. 106, 54317 (2009)
[Crossref]

H. C. Lin, Z. C. Feng, M. S. Chen, Z. X. Shen, I. T. Ferguson, W. J. Lu, "Raman scattering study on anisotropic property of wurtzite GaN," J. Appl. Phys. 105, 036102 (2009)
[Crossref]

J. Cryst. Growth (4)

T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, S. Olson, "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition," J. Cryst. Growth 310, 2514‒2519 (2008)
[Crossref]

M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, J. M. Zhou, "Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices," J. Cryst. Growth 310, 1088‒1092 (2008)
[Crossref]

U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter, "Growth of AlxGa1-xN-layers on planar and patterned substrates," J. Cryst. Growth 272, 506‒514 (2004)
[Crossref]

S. R. Xu, Y. Hao, J. C. Zhang, Y. R. Cao, X. W. Zhou, L. A. Yang, X. X. Ou, K. Chen, W. Mao, "Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition," J. Cryst. Growth 312, 3521 (2010)
[Crossref]

J. Mater Sci.: Mater Electron. (1)

G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers, "Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering," J. Mater Sci.: Mater Electron. 19, S51 (2008)

J. Opt. Soc. Korea (1)

Nano Lett. (1)

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