Abstract

In this study, we present a detailed investigation of luminescence properties of a blue light-emitting diode using InGaN/GaN (indium component is 17.43%) multiple quantum wells as the active region grown on patterned sapphire substrate by low-pressure metal-organic chemical vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman scattering (RS) and photoluminescence (PL) measurements are employed to study the crystal quality, the threading dislocation density, surface morphology, residual strain existing in the active region and optical properties. We conclude that the crystalline quality and surface morphology can be greatly improved, the red-shift of peak wavelength is eliminated and the superior blue light LED can be obtained because the residual strain that existed in the active region can be relaxed when the LED is grown on patterned sapphire substrate (PSS). We discuss the mechanisms of growing on PSS to enhance the superior luminescence properties of blue light LED from the viewpoint of residual strain in the active region.

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  1. T. Jiang, S. R. Xu, J. C. Zhang, Y. Xie, and Y. HaoSpatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphireSci. Rep.2016619955
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  3. S. R. Xu, Y. Hao, J. C. Zhang, T. Jiang, L. A. Yang, X. L. Lu, and Z. Y. LinYellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor depositionNano Lett.201313836543657
  4. D.-H. Wang and T.-H. XuInvestigation on HT-AlN nucleation layers and AlGaN epifilms inserting LT-AlN nucleation layer on c-plane sapphire substrateJ. Opt. Soc. Korea2016201125129
  5. T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, and S. OlsonInGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor depositionJ. Cryst. Growth20083101025142519
  6. S. R. Xu, P. X. Li, J. C. Zhang, T. Jiang, J. J. Ma, Z. Y. Lin, and Y. HaoThreading dislocation annihilation in the GaN layer on cone patterned sapphire substrateJ. Alloys Compd.2014614360363
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  11. A. Hushur, M. H. Manghnani, and J. NarayanRaman studies of GaN/sapphire thin film heterostructuresJ. Appl. Phys.2009106554317
  12. G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, and C. F. YangInGaN/GaN MQW high brightness LED grown by MOCVDOpt. Mater.2002231-2183186
  13. H. C. Lin, Z. C. Feng, M. S. Chen, Z. X. Shen, I. T. Ferguson, and W. J. LuRaman scattering study on anisotropic property of wurtzite GaNJ. Appl. Phys.20091053036102
  14. G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, and M. WeyersAnisotropic strain on phonons in a-plane GaN layers studied by Raman scatteringJ. Mater Sci.: Mater Electron.200819S51
  15. V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, and S. NakamuraAnisotropic strain and phonon deformation potentials in GaNPhys. Rev. B20075195217
  16. D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, and I. AkasakiFree exciton emission in GaNPhys. Review B19965425182522

Other (16)

T. Jiang, S. R. Xu, J. C. Zhang, Y. Xie, and Y. HaoSpatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphireSci. Rep.2016619955

D. H. Wang, Y. Hao, S. R. Xu, T. H. Xu, D. C. Wang, T. Z. Yao, and Y. N. ZhangReducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substratesJ. Alloys Compd.2013555311314

S. R. Xu, Y. Hao, J. C. Zhang, T. Jiang, L. A. Yang, X. L. Lu, and Z. Y. LinYellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor depositionNano Lett.201313836543657

D.-H. Wang and T.-H. XuInvestigation on HT-AlN nucleation layers and AlGaN epifilms inserting LT-AlN nucleation layer on c-plane sapphire substrateJ. Opt. Soc. Korea2016201125129

T. Pinnington, D. Koleske, J. Zahler, C. Ladous, Y. Park, M. Crawford, M. Banas, G. Thaler, M. Russell, and S. OlsonInGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor depositionJ. Cryst. Growth20083101025142519

S. R. Xu, P. X. Li, J. C. Zhang, T. Jiang, J. J. Ma, Z. Y. Lin, and Y. HaoThreading dislocation annihilation in the GaN layer on cone patterned sapphire substrateJ. Alloys Compd.2014614360363

U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, and A. HangleiterGrowth of AlxGa1-xN-layers on planar and patterned substratesJ. Cryst. Growth20042721-4506514

S. R. Xu, Y. Hao, J. C. Zhang, Y. R. Cao, X. W. Zhou, L. A. Yang, X. X. Ou, K. Chen, and W. MaoPolar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor depositionJ. Cryst. Growth20103123521

D. H. Wang, H. Zhou, J. C. Zhang, S. R. Xu, L. X. Zhang, F. N. Meng, S. Ai, and Y. HaoStudy on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrateSci. China: Phys., Mech. Astron.2012551223832388

M. Z. Peng, L. W. Guo, J. Zhang, X. L. Zhu, N. S. Yu, J. F. Yan, H. H. Liu, H. Q. Jia, H. Chen, and J. M. ZhouReducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlatticesJ. Cryst. Growth2008310610881092

A. Hushur, M. H. Manghnani, and J. NarayanRaman studies of GaN/sapphire thin film heterostructuresJ. Appl. Phys.2009106554317

G. Y. Zhang, Z. J. Yang, Y. Z. Tong, Z. X. Qin, X. D. Hu, Z. Z. Chen, X. M. Ding, M. Lu, Z. H. Li, T. J. Yu, L. Zhang, Z. Z. Gan, Y. Zhao, and C. F. YangInGaN/GaN MQW high brightness LED grown by MOCVDOpt. Mater.2002231-2183186

H. C. Lin, Z. C. Feng, M. S. Chen, Z. X. Shen, I. T. Ferguson, and W. J. LuRaman scattering study on anisotropic property of wurtzite GaNJ. Appl. Phys.20091053036102

G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, and M. WeyersAnisotropic strain on phonons in a-plane GaN layers studied by Raman scatteringJ. Mater Sci.: Mater Electron.200819S51

V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. Haskell, P. Fini, J. Speck, and S. NakamuraAnisotropic strain and phonon deformation potentials in GaNPhys. Rev. B20075195217

D. Kovalev, B. Averboukh, D. Volm, B. K. Meyer, H. Amano, and I. AkasakiFree exciton emission in GaNPhys. Review B19965425182522

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