Abstract
A-plane GaN films are deposited on (302) \gamma-LiAlO2 substrates by
metalorganic chemical vapor deposition (MOCVD). The X-ray diffraction (XRD) results
indicate that the in-plane orientation relationship between GaN and LAO substrates
is [010]LAO//[0001]GaN and [203]LAO//[1100]GaN with 0.03% and 2.85% lattice
mismatch, respectively. Raman scattering results indicate that the strain in the
films decreases along with the increase in the thickness of the films. In addition
to the band edge emission at 3.42 eV, defects-related luminescence at 3.35 eV is
observed in the photoluminescence (PL) spectra. The cathodoluminescence (CL) spectra
indicate that the 3.35-eV emission is related to the V pits.
© 2011 Chinese Optics Letters
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