Abstract

We prepare Six(ZrO2)100?x composite films using the co-sputtering method. The chemical structures of the films which are prepared under different conditions are analyzed with X-ray photoemission spectroscopy. Thermal treatment influences on optical property and resistance switching characteristics of these composite films are investigated by spectroscopic ellipsometry and semiconductor parameter analyzer, respectively. With the proper Si-doped Six(ZrO2)100?x interlayer, the Al/ Six(ZrO2)100?x/Al device cell samples present very reliable and reproducible switching behaviors. It provides a feasible solution for easy multilevel storage and better fault tolerance in nonvolatile memory application.

© 2011 Chinese Optics Letters

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