Abstract

We present a theoretical investigation of THz long-range surface plasmon polaritons propagating on thin layers of InSb. The metallic behavior of doped semiconductors at THz frequencies allows the excitation of surface plasmon polaritons with propagation and confinement lengths that can be actively controlled. This control is achieved by acting on the free carrier density, which can be realized by changing the temperature of InSb.

© 2011 Chinese Optics Letters

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription