Abstract

An optical bandwidth analysis of a quantum-well (16 nm) transistor laser with 150-\mum cavity length using a charge control model is reported in order to modify the quantum-well location through the base region. At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction. No remarkable resonance peak, limiting factor in laser diodes, is observed during this modification in transistor laser structure. The method can be utilized for transistor laser structure design.

© 2009 Chinese Optics Letters

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