Abstract

Nano-crystalline silicon/silicon oxide (nc-Si/SiO2 structures have been prepared from amorphous silicon films on both silicon and quartz substrates by using electron-beam evaporation approach and annealing at temperatures about 600 oC in air. As a thermal oxidation procedure, the annealing treatment is not only a crystallization process but also an oxidation process. Scanning electron microscopy is employed to characterize the surface morphology of the nc-Si/SiO2 layers. Transmission electron microscopy study shows the sizes of nc-Si grains on the two different substrates. The nc-Si/SiO2 structures exhibit visible luminescence at room temperature as confirmed by photoluminescence spectroscopy. Comparing the photoluminescence spectra of different samples, our results agree with the quantum confinement-luminescence center model.

© 2009 Chinese Optics Letters

PDF Article

References

  • View by:
  • |
  • |
  • |

  1. Z. Chen, G. Bosman, and R. Ochoa, Appl. Phys. Lett. 62, 708 (1993).
  2. P. Steiner, F. Kozlowski, and W. Lang, Appl. Phys. Lett. 62, 2700 (1993).
  3. S. Lazarouk, P. Jaguiro, S. Katsouba, G. Masini, S. La Monica, G. Maiello, and A. Ferrari, Appl. Phys. Lett. 68, 1646 (1996).
  4. P. Hlinomaz, O. Klíma, A. Hospodková, E. Hulicius, J. Oswald, E. Sípek, and J. Koika, Appl. Phys. Lett. 64, 3118 (1994).
  5. H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida, Nature 400, 853 (1999).
  6. K. Ueno and N. Koshida, Appl. Phys. Lett. 74, 93 (1999).
  7. W. H. Zheng, P. Reece, B. Q. Sun, and M. Gal, Appl. Phys. Lett. 84, 3519 (2004).
  8. Z. Gaburro, C. J. Oton, L. Pavesi, and L. Pancheri, Appl. Phys. Lett. 84, 4388 (2004).
  9. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
  10. G. Fu, L. Chu, Y. Zhou, C. Yan, D. Wu, Y. Wang, and Y. Peng, Chinese J. Lasers (in Chinese) 32, 1254 (2005).
  11. L. Chu, L. Lu, Y. Wang, and G. Fu, Chinese J. Lasers (in Chinese) 34, 555 (2007).
  12. J. Wang, H. Guo, L. Li, and P. Lü, Chinese J. Lasers(in Chinese) 34, 1498 (2007).
  13. G. Qin, J. Infrared Millim. Waves (in Chinese) 24, 165 (2005).
  14. Z. Cen, J. Xu, X. Li, W. Li, S. Chen, Y. Liu, X. Huang, and K. Chen, Chin. J. Semicond. (in Chinese) 27, 1016 (2006).
  15. H. Guo, L. Yang, and Q. Wang, Chin. J. Semicond. (in Chinese) 28, 640 (2007).
  16. K. Wang and J. Tang, Semicond. Optoelectron. (in Chinese) 15, 340 (1994).

2007 (3)

L. Chu, L. Lu, Y. Wang, and G. Fu, Chinese J. Lasers (in Chinese) 34, 555 (2007).

J. Wang, H. Guo, L. Li, and P. Lü, Chinese J. Lasers(in Chinese) 34, 1498 (2007).

H. Guo, L. Yang, and Q. Wang, Chin. J. Semicond. (in Chinese) 28, 640 (2007).

2006 (1)

Z. Cen, J. Xu, X. Li, W. Li, S. Chen, Y. Liu, X. Huang, and K. Chen, Chin. J. Semicond. (in Chinese) 27, 1016 (2006).

2005 (2)

G. Fu, L. Chu, Y. Zhou, C. Yan, D. Wu, Y. Wang, and Y. Peng, Chinese J. Lasers (in Chinese) 32, 1254 (2005).

G. Qin, J. Infrared Millim. Waves (in Chinese) 24, 165 (2005).

2004 (2)

W. H. Zheng, P. Reece, B. Q. Sun, and M. Gal, Appl. Phys. Lett. 84, 3519 (2004).

Z. Gaburro, C. J. Oton, L. Pavesi, and L. Pancheri, Appl. Phys. Lett. 84, 4388 (2004).

1999 (2)

H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida, Nature 400, 853 (1999).

K. Ueno and N. Koshida, Appl. Phys. Lett. 74, 93 (1999).

1996 (1)

S. Lazarouk, P. Jaguiro, S. Katsouba, G. Masini, S. La Monica, G. Maiello, and A. Ferrari, Appl. Phys. Lett. 68, 1646 (1996).

1994 (2)

P. Hlinomaz, O. Klíma, A. Hospodková, E. Hulicius, J. Oswald, E. Sípek, and J. Koika, Appl. Phys. Lett. 64, 3118 (1994).

K. Wang and J. Tang, Semicond. Optoelectron. (in Chinese) 15, 340 (1994).

1993 (2)

Z. Chen, G. Bosman, and R. Ochoa, Appl. Phys. Lett. 62, 708 (1993).

P. Steiner, F. Kozlowski, and W. Lang, Appl. Phys. Lett. 62, 2700 (1993).

1990 (1)

L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

Bosman, G.

Z. Chen, G. Bosman, and R. Ochoa, Appl. Phys. Lett. 62, 708 (1993).

Canham, L. T.

L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

Cen, Z.

Z. Cen, J. Xu, X. Li, W. Li, S. Chen, Y. Liu, X. Huang, and K. Chen, Chin. J. Semicond. (in Chinese) 27, 1016 (2006).

Chen, K.

Z. Cen, J. Xu, X. Li, W. Li, S. Chen, Y. Liu, X. Huang, and K. Chen, Chin. J. Semicond. (in Chinese) 27, 1016 (2006).

Chen, S.

Z. Cen, J. Xu, X. Li, W. Li, S. Chen, Y. Liu, X. Huang, and K. Chen, Chin. J. Semicond. (in Chinese) 27, 1016 (2006).

Chen, Z.

Z. Chen, G. Bosman, and R. Ochoa, Appl. Phys. Lett. 62, 708 (1993).

Chu, L.

L. Chu, L. Lu, Y. Wang, and G. Fu, Chinese J. Lasers (in Chinese) 34, 555 (2007).

G. Fu, L. Chu, Y. Zhou, C. Yan, D. Wu, Y. Wang, and Y. Peng, Chinese J. Lasers (in Chinese) 32, 1254 (2005).

Ferrari, A.

S. Lazarouk, P. Jaguiro, S. Katsouba, G. Masini, S. La Monica, G. Maiello, and A. Ferrari, Appl. Phys. Lett. 68, 1646 (1996).

Fu, G.

L. Chu, L. Lu, Y. Wang, and G. Fu, Chinese J. Lasers (in Chinese) 34, 555 (2007).

G. Fu, L. Chu, Y. Zhou, C. Yan, D. Wu, Y. Wang, and Y. Peng, Chinese J. Lasers (in Chinese) 32, 1254 (2005).

Gaburro, Z.

Z. Gaburro, C. J. Oton, L. Pavesi, and L. Pancheri, Appl. Phys. Lett. 84, 4388 (2004).

Gal, M.

W. H. Zheng, P. Reece, B. Q. Sun, and M. Gal, Appl. Phys. Lett. 84, 3519 (2004).

Guo, H.

H. Guo, L. Yang, and Q. Wang, Chin. J. Semicond. (in Chinese) 28, 640 (2007).

J. Wang, H. Guo, L. Li, and P. Lü, Chinese J. Lasers(in Chinese) 34, 1498 (2007).

Hlinomaz, P.

P. Hlinomaz, O. Klíma, A. Hospodková, E. Hulicius, J. Oswald, E. Sípek, and J. Koika, Appl. Phys. Lett. 64, 3118 (1994).

Hospodková, A.

P. Hlinomaz, O. Klíma, A. Hospodková, E. Hulicius, J. Oswald, E. Sípek, and J. Koika, Appl. Phys. Lett. 64, 3118 (1994).

Huang, X.

Z. Cen, J. Xu, X. Li, W. Li, S. Chen, Y. Liu, X. Huang, and K. Chen, Chin. J. Semicond. (in Chinese) 27, 1016 (2006).

Hulicius, E.

P. Hlinomaz, O. Klíma, A. Hospodková, E. Hulicius, J. Oswald, E. Sípek, and J. Koika, Appl. Phys. Lett. 64, 3118 (1994).

Jaguiro, P.

S. Lazarouk, P. Jaguiro, S. Katsouba, G. Masini, S. La Monica, G. Maiello, and A. Ferrari, Appl. Phys. Lett. 68, 1646 (1996).

Katsouba, S.

S. Lazarouk, P. Jaguiro, S. Katsouba, G. Masini, S. La Monica, G. Maiello, and A. Ferrari, Appl. Phys. Lett. 68, 1646 (1996).

Klíma, O.

P. Hlinomaz, O. Klíma, A. Hospodková, E. Hulicius, J. Oswald, E. Sípek, and J. Koika, Appl. Phys. Lett. 64, 3118 (1994).

Koika, J.

P. Hlinomaz, O. Klíma, A. Hospodková, E. Hulicius, J. Oswald, E. Sípek, and J. Koika, Appl. Phys. Lett. 64, 3118 (1994).

Koshida, N.

K. Ueno and N. Koshida, Appl. Phys. Lett. 74, 93 (1999).

H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida, Nature 400, 853 (1999).

Kozlowski, F.

P. Steiner, F. Kozlowski, and W. Lang, Appl. Phys. Lett. 62, 2700 (1993).

Lang, W.

P. Steiner, F. Kozlowski, and W. Lang, Appl. Phys. Lett. 62, 2700 (1993).

Lazarouk, S.

S. Lazarouk, P. Jaguiro, S. Katsouba, G. Masini, S. La Monica, G. Maiello, and A. Ferrari, Appl. Phys. Lett. 68, 1646 (1996).

Li, L.

J. Wang, H. Guo, L. Li, and P. Lü, Chinese J. Lasers(in Chinese) 34, 1498 (2007).

Li, W.

Z. Cen, J. Xu, X. Li, W. Li, S. Chen, Y. Liu, X. Huang, and K. Chen, Chin. J. Semicond. (in Chinese) 27, 1016 (2006).

Li, X.

Z. Cen, J. Xu, X. Li, W. Li, S. Chen, Y. Liu, X. Huang, and K. Chen, Chin. J. Semicond. (in Chinese) 27, 1016 (2006).

Liu, Y.

Z. Cen, J. Xu, X. Li, W. Li, S. Chen, Y. Liu, X. Huang, and K. Chen, Chin. J. Semicond. (in Chinese) 27, 1016 (2006).

Lu, L.

L. Chu, L. Lu, Y. Wang, and G. Fu, Chinese J. Lasers (in Chinese) 34, 555 (2007).

Lü, P.

J. Wang, H. Guo, L. Li, and P. Lü, Chinese J. Lasers(in Chinese) 34, 1498 (2007).

Maiello, G.

S. Lazarouk, P. Jaguiro, S. Katsouba, G. Masini, S. La Monica, G. Maiello, and A. Ferrari, Appl. Phys. Lett. 68, 1646 (1996).

Masini, G.

S. Lazarouk, P. Jaguiro, S. Katsouba, G. Masini, S. La Monica, G. Maiello, and A. Ferrari, Appl. Phys. Lett. 68, 1646 (1996).

Monica, S. La

S. Lazarouk, P. Jaguiro, S. Katsouba, G. Masini, S. La Monica, G. Maiello, and A. Ferrari, Appl. Phys. Lett. 68, 1646 (1996).

Nakajima, T.

H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida, Nature 400, 853 (1999).

Ochoa, R.

Z. Chen, G. Bosman, and R. Ochoa, Appl. Phys. Lett. 62, 708 (1993).

Oswald, J.

P. Hlinomaz, O. Klíma, A. Hospodková, E. Hulicius, J. Oswald, E. Sípek, and J. Koika, Appl. Phys. Lett. 64, 3118 (1994).

Oton, C. J.

Z. Gaburro, C. J. Oton, L. Pavesi, and L. Pancheri, Appl. Phys. Lett. 84, 4388 (2004).

Pancheri, L.

Z. Gaburro, C. J. Oton, L. Pavesi, and L. Pancheri, Appl. Phys. Lett. 84, 4388 (2004).

Pavesi, L.

Z. Gaburro, C. J. Oton, L. Pavesi, and L. Pancheri, Appl. Phys. Lett. 84, 4388 (2004).

Peng, Y.

G. Fu, L. Chu, Y. Zhou, C. Yan, D. Wu, Y. Wang, and Y. Peng, Chinese J. Lasers (in Chinese) 32, 1254 (2005).

Qin, G.

G. Qin, J. Infrared Millim. Waves (in Chinese) 24, 165 (2005).

Reece, P.

W. H. Zheng, P. Reece, B. Q. Sun, and M. Gal, Appl. Phys. Lett. 84, 3519 (2004).

Shinoda, H.

H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida, Nature 400, 853 (1999).

Sípek, E.

P. Hlinomaz, O. Klíma, A. Hospodková, E. Hulicius, J. Oswald, E. Sípek, and J. Koika, Appl. Phys. Lett. 64, 3118 (1994).

Steiner, P.

P. Steiner, F. Kozlowski, and W. Lang, Appl. Phys. Lett. 62, 2700 (1993).

Sun, B. Q.

W. H. Zheng, P. Reece, B. Q. Sun, and M. Gal, Appl. Phys. Lett. 84, 3519 (2004).

Tang, J.

K. Wang and J. Tang, Semicond. Optoelectron. (in Chinese) 15, 340 (1994).

Ueno, K.

H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida, Nature 400, 853 (1999).

K. Ueno and N. Koshida, Appl. Phys. Lett. 74, 93 (1999).

Wang, J.

J. Wang, H. Guo, L. Li, and P. Lü, Chinese J. Lasers(in Chinese) 34, 1498 (2007).

Wang, K.

K. Wang and J. Tang, Semicond. Optoelectron. (in Chinese) 15, 340 (1994).

Wang, Q.

H. Guo, L. Yang, and Q. Wang, Chin. J. Semicond. (in Chinese) 28, 640 (2007).

Wang, Y.

L. Chu, L. Lu, Y. Wang, and G. Fu, Chinese J. Lasers (in Chinese) 34, 555 (2007).

G. Fu, L. Chu, Y. Zhou, C. Yan, D. Wu, Y. Wang, and Y. Peng, Chinese J. Lasers (in Chinese) 32, 1254 (2005).

Wu, D.

G. Fu, L. Chu, Y. Zhou, C. Yan, D. Wu, Y. Wang, and Y. Peng, Chinese J. Lasers (in Chinese) 32, 1254 (2005).

Xu, J.

Z. Cen, J. Xu, X. Li, W. Li, S. Chen, Y. Liu, X. Huang, and K. Chen, Chin. J. Semicond. (in Chinese) 27, 1016 (2006).

Yan, C.

G. Fu, L. Chu, Y. Zhou, C. Yan, D. Wu, Y. Wang, and Y. Peng, Chinese J. Lasers (in Chinese) 32, 1254 (2005).

Yang, L.

H. Guo, L. Yang, and Q. Wang, Chin. J. Semicond. (in Chinese) 28, 640 (2007).

Zheng, W. H.

W. H. Zheng, P. Reece, B. Q. Sun, and M. Gal, Appl. Phys. Lett. 84, 3519 (2004).

Zhou, Y.

G. Fu, L. Chu, Y. Zhou, C. Yan, D. Wu, Y. Wang, and Y. Peng, Chinese J. Lasers (in Chinese) 32, 1254 (2005).

Appl. Phys. Lett. (8)

K. Ueno and N. Koshida, Appl. Phys. Lett. 74, 93 (1999).

W. H. Zheng, P. Reece, B. Q. Sun, and M. Gal, Appl. Phys. Lett. 84, 3519 (2004).

Z. Gaburro, C. J. Oton, L. Pavesi, and L. Pancheri, Appl. Phys. Lett. 84, 4388 (2004).

L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

Z. Chen, G. Bosman, and R. Ochoa, Appl. Phys. Lett. 62, 708 (1993).

P. Steiner, F. Kozlowski, and W. Lang, Appl. Phys. Lett. 62, 2700 (1993).

S. Lazarouk, P. Jaguiro, S. Katsouba, G. Masini, S. La Monica, G. Maiello, and A. Ferrari, Appl. Phys. Lett. 68, 1646 (1996).

P. Hlinomaz, O. Klíma, A. Hospodková, E. Hulicius, J. Oswald, E. Sípek, and J. Koika, Appl. Phys. Lett. 64, 3118 (1994).

Chin. J. Semicond. (in Chinese) (2)

Z. Cen, J. Xu, X. Li, W. Li, S. Chen, Y. Liu, X. Huang, and K. Chen, Chin. J. Semicond. (in Chinese) 27, 1016 (2006).

H. Guo, L. Yang, and Q. Wang, Chin. J. Semicond. (in Chinese) 28, 640 (2007).

Chinese J. Lasers (in Chinese) (2)

G. Fu, L. Chu, Y. Zhou, C. Yan, D. Wu, Y. Wang, and Y. Peng, Chinese J. Lasers (in Chinese) 32, 1254 (2005).

L. Chu, L. Lu, Y. Wang, and G. Fu, Chinese J. Lasers (in Chinese) 34, 555 (2007).

Chinese J. Lasers(in Chinese) (1)

J. Wang, H. Guo, L. Li, and P. Lü, Chinese J. Lasers(in Chinese) 34, 1498 (2007).

J. Infrared Millim. Waves (in Chinese) (1)

G. Qin, J. Infrared Millim. Waves (in Chinese) 24, 165 (2005).

Nature (1)

H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida, Nature 400, 853 (1999).

Semicond. Optoelectron. (in Chinese) (1)

K. Wang and J. Tang, Semicond. Optoelectron. (in Chinese) 15, 340 (1994).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.