Abstract

Electroluminescence peaking at 1.3 \mum is observed from high concentration boron-diffused silicon p+-n junctions. This emission is efficient at low temperature with a quantum efficiency 40 times higher than that of the band-to-band emission around 1.1 \mum, but disappears at room temperature. The 1.3-\mum band possibly originates from the dislocation networks lying near the junction region, which are introduced by high concentration boron diffusion.

© 2009 Chinese Optics Letters

Near-infrared and mid-infrared light emission of boron-doped crystalline silicon

Xiaoming Wang, Jiajing He, and Yaping Dan
Opt. Express 32(7) 10941-10947 (2024)

Ultraviolet electroluminescence from hetero p-n junction between a single ZnO microsphere and p-GaN thin film

Norihiro Tetsuyama, Koshi Fusazaki, Yasuaki Mizokami, Tetsuya Shimogaki, Mitsuhiro Higashihata, Daisuke Nakamura, and Tatsuo Okada
Opt. Express 22(8) 10026-10031 (2014)

High-efficiency strip-loaded waveguide based silicon Mach-Zehnder modulator with vertical p-n junction phase shifter

Yuriko Maegami, Guangwei Cong, Morifumi Ohno, Makoto Okano, Kazuto Itoh, Nobuhiko Nishiyama, Shigehisa Arai, and Koji Yamada
Opt. Express 25(25) 31407-31416 (2017)

Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate

Szu-Lin Cheng, Jesse Lu, Gary Shambat, Hyun-Yong Yu, Krishna Saraswat, Jelena Vuckovic, and Yoshio Nishi
Opt. Express 17(12) 10019-10024 (2009)

Electroluminescence from n-In₂O₃:Sn randomly assembled nanorods/p-SiC heterojunction

H. Y. Yang, S. F. Yu, H. K. Liang, T. P. Chen, J. Gao, and T. Wu
Opt. Express 18(15) 15585-15590 (2010)