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Optica Publishing Group
  • Chinese Optics Letters
  • Vol. 7,
  • Issue 10,
  • pp. 924-925
  • (2009)

Silicon electro-optic modulator with high-permittivity gate dielectric layer

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Abstract

A high-permittivity (high-k) material is applied as the gate dielectric layer in a silicon metal-oxide-semiconductor (MOS) capacitor to form a special electro-optic (EO) modulator. Both induced charge density and modulation efficiency in the proposed modulator are improved due to the special structure design and the application of the high-k material. The device has an ultra-compact dimension of 691 \mu m in length.

© 2009 Chinese Optics Letters

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