Abstract

A high-permittivity (high-k) material is applied as the gate dielectric layer in a silicon metal-oxide-semiconductor (MOS) capacitor to form a special electro-optic (EO) modulator. Both induced charge density and modulation efficiency in the proposed modulator are improved due to the special structure design and the application of the high-k material. The device has an ultra-compact dimension of 691 \mu m in length.

© 2009 Chinese Optics Letters

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2008 (1)

V. M. N. Passaro and F. Dell'Olio, IEEE Trans. Nanotechnol. 7, 401 (2008).

2007 (1)

2006 (1)

2005 (1)

A. Liu, D. Samara-Rubio, L. Liao, and M. Paniccia, IEEE J. Sel. Top. Quantum Electron. 11, 367 (2005).

2004 (2)

Z.-J. Yan, Y.-Y. Wang, R. Xu, and Z.-M. Jiang, Acta Phys. Sin. (in Chinese) 53, 2771 (2004).

C. E. Png, S. P. Chan, S. T. Lim, and G. T. Reed, J. Lightwave Technol. 22, 1573 (2004).

1990 (1)

S. R. Giguere, L. Friedman, R. A. Soref, and J. P. Lorenzo, J. Appl. Phys. 68, 4964 (1990).

Chan, S. P.

Chen, S.

Dell'Olio, F.

V. M. N. Passaro and F. Dell'Olio, IEEE Trans. Nanotechnol. 7, 401 (2008).

Friedman, L.

S. R. Giguere, L. Friedman, R. A. Soref, and J. P. Lorenzo, J. Appl. Phys. 68, 4964 (1990).

Giguere, S. R.

S. R. Giguere, L. Friedman, R. A. Soref, and J. P. Lorenzo, J. Appl. Phys. 68, 4964 (1990).

Jiang, Z.-M.

Z.-J. Yan, Y.-Y. Wang, R. Xu, and Z.-M. Jiang, Acta Phys. Sin. (in Chinese) 53, 2771 (2004).

Liao, L.

A. Liu, D. Samara-Rubio, L. Liao, and M. Paniccia, IEEE J. Sel. Top. Quantum Electron. 11, 367 (2005).

Lim, S. T.

Lipson, M.

Liu, A.

A. Liu, D. Samara-Rubio, L. Liao, and M. Paniccia, IEEE J. Sel. Top. Quantum Electron. 11, 367 (2005).

Lorenzo, J. P.

S. R. Giguere, L. Friedman, R. A. Soref, and J. P. Lorenzo, J. Appl. Phys. 68, 4964 (1990).

Manipatruni, S.

Paniccia, M.

A. Liu, D. Samara-Rubio, L. Liao, and M. Paniccia, IEEE J. Sel. Top. Quantum Electron. 11, 367 (2005).

Passaro, V. M. N.

V. M. N. Passaro and F. Dell'Olio, IEEE Trans. Nanotechnol. 7, 401 (2008).

Png, C. E.

Reed, G. T.

Samara-Rubio, D.

A. Liu, D. Samara-Rubio, L. Liao, and M. Paniccia, IEEE J. Sel. Top. Quantum Electron. 11, 367 (2005).

Schmidt, B.

Shakya, J.

Soref, R. A.

S. R. Giguere, L. Friedman, R. A. Soref, and J. P. Lorenzo, J. Appl. Phys. 68, 4964 (1990).

Sun, F.

Tu, X.

Wang, Q.

Wang, Y.-Y.

Z.-J. Yan, Y.-Y. Wang, R. Xu, and Z.-M. Jiang, Acta Phys. Sin. (in Chinese) 53, 2771 (2004).

Xu, Q.

Xu, R.

Z.-J. Yan, Y.-Y. Wang, R. Xu, and Z.-M. Jiang, Acta Phys. Sin. (in Chinese) 53, 2771 (2004).

Yan, Z.-J.

Z.-J. Yan, Y.-Y. Wang, R. Xu, and Z.-M. Jiang, Acta Phys. Sin. (in Chinese) 53, 2771 (2004).

Yu, J.

Zhao, L.

Acta Phys. Sin. (in Chinese) (1)

Z.-J. Yan, Y.-Y. Wang, R. Xu, and Z.-M. Jiang, Acta Phys. Sin. (in Chinese) 53, 2771 (2004).

IEEE J. Sel. Top. Quantum Electron. (1)

A. Liu, D. Samara-Rubio, L. Liao, and M. Paniccia, IEEE J. Sel. Top. Quantum Electron. 11, 367 (2005).

IEEE Trans. Nanotechnol. (1)

V. M. N. Passaro and F. Dell'Olio, IEEE Trans. Nanotechnol. 7, 401 (2008).

J. Appl. Phys. (1)

S. R. Giguere, L. Friedman, R. A. Soref, and J. P. Lorenzo, J. Appl. Phys. 68, 4964 (1990).

J. Lightwave Technol. (2)

Opt. Express (1)

Other (1)

A. Mao, D. Gao, and Z. Zhou, in Proceedings of the 4th IEEE International Conference On Group IV Photonics WP28 (2007).

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