Abstract

The femtosecond laser induced void array inside Al<sub>2</sub>O<sub>3</sub> crystals was discussed. The void array was formed spontaneously under the irradiation of a single beam of infrared femtosecond laser which was focused at a fixed point inside the Al<sub>2</sub>O<sub>3</sub> crystal sample. It was found that the regular voids only could be fabricated near the sample surface, which was different from the situation in CaF<sub>2</sub> single crystal reported before. The possible mechanism of the phenomena was also discussed.

© 2008 Chinese Optics Letters

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