Abstract

Intrinsic stresses of carbon films deposited by direct current (DC) magnetron sputtering were investigated. The bombardments of energetic particles during the growth of films were considered to be the main reason for compressive intrinsic stresses. The values of intrinsic stresses were determined by measuring the radius of curvature of substrates before and after film deposition. By varying argon pressure and target-substrate distance, energies of neutral carbon atoms impinging on the growing films were optimized to control the intrinsic stresses level. The stress evolution in carbon films as a function of film thickness was investigated and a void-related stress relief mechanism was proposed to interpret this evolution.

© 2008 Chinese Optics Letters

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2006 (2)

2004 (1)

O. Durand-Drouhin and M. Benlahsen, Solid State Commun. 131, 425 (2004).

2002 (1)

S. Jacobi, B. Steeg, J. Wiesmann, M. Stormer, J. Feldhaus, R. Bormann, and C. Michaelsen, Proc. SPIE 4782, 113 (2002).

1998 (1)

D. L. Windt, Computers in Physics 12, 360 (1998).

1997 (1)

E. Mounier and Y. Pauleau, Diamond. Relat. Mater. 6, 1182 (1997).

1996 (1)

E. Mounier and Y. Pauleau, J. Vac. Sci. Technol. A 14, 2535 (1996).

1993 (1)

C. A. Davis, Thin Solid Films 226, 30 (1993).

1989 (1)

F. M. d'Heurle and J. M. E. Harper, Thin Solid Films 171, 81 (1989).

1987 (1)

H. Windischmann, J. Appl. Phys. 62, 1800 (1987).

1974 (1)

D. Henderson, M. H. Brodsky, and P. Chaudhari, Appl. Phys. Lett. 25, 641 (1974).

1970 (1)

F. M. d'Heurle, Metall. Teans. 1, 725 (1970).

Benlahsen, M.

O. Durand-Drouhin and M. Benlahsen, Solid State Commun. 131, 425 (2004).

Bormann, R.

S. Jacobi, B. Steeg, J. Wiesmann, M. Stormer, J. Feldhaus, R. Bormann, and C. Michaelsen, Proc. SPIE 4782, 113 (2002).

Brodsky, M. H.

D. Henderson, M. H. Brodsky, and P. Chaudhari, Appl. Phys. Lett. 25, 641 (1974).

Chaudhari, P.

D. Henderson, M. H. Brodsky, and P. Chaudhari, Appl. Phys. Lett. 25, 641 (1974).

Chen, L.

Davis, C. A.

C. A. Davis, Thin Solid Films 226, 30 (1993).

d'Heurle, F. M.

F. M. d'Heurle and J. M. E. Harper, Thin Solid Films 171, 81 (1989).

F. M. d'Heurle, Metall. Teans. 1, 725 (1970).

Durand-Drouhin, O.

O. Durand-Drouhin and M. Benlahsen, Solid State Commun. 131, 425 (2004).

Feldhaus, J.

S. Jacobi, B. Steeg, J. Wiesmann, M. Stormer, J. Feldhaus, R. Bormann, and C. Michaelsen, Proc. SPIE 4782, 113 (2002).

Harper, J. M. E.

F. M. d'Heurle and J. M. E. Harper, Thin Solid Films 171, 81 (1989).

Henderson, D.

D. Henderson, M. H. Brodsky, and P. Chaudhari, Appl. Phys. Lett. 25, 641 (1974).

Huo, T.

Jacobi, S.

S. Jacobi, B. Steeg, J. Wiesmann, M. Stormer, J. Feldhaus, R. Bormann, and C. Michaelsen, Proc. SPIE 4782, 113 (2002).

Li, C.

Michaelsen, C.

S. Jacobi, B. Steeg, J. Wiesmann, M. Stormer, J. Feldhaus, R. Bormann, and C. Michaelsen, Proc. SPIE 4782, 113 (2002).

Mounier, E.

E. Mounier and Y. Pauleau, Diamond. Relat. Mater. 6, 1182 (1997).

E. Mounier and Y. Pauleau, J. Vac. Sci. Technol. A 14, 2535 (1996).

Pauleau, Y.

E. Mounier and Y. Pauleau, Diamond. Relat. Mater. 6, 1182 (1997).

E. Mounier and Y. Pauleau, J. Vac. Sci. Technol. A 14, 2535 (1996).

Steeg, B.

S. Jacobi, B. Steeg, J. Wiesmann, M. Stormer, J. Feldhaus, R. Bormann, and C. Michaelsen, Proc. SPIE 4782, 113 (2002).

Stormer, M.

S. Jacobi, B. Steeg, J. Wiesmann, M. Stormer, J. Feldhaus, R. Bormann, and C. Michaelsen, Proc. SPIE 4782, 113 (2002).

Wang, F.

Wang, H.

Wang, Z.

Wiesmann, J.

S. Jacobi, B. Steeg, J. Wiesmann, M. Stormer, J. Feldhaus, R. Bormann, and C. Michaelsen, Proc. SPIE 4782, 113 (2002).

Windischmann, H.

H. Windischmann, J. Appl. Phys. 62, 1800 (1987).

Windt, D. L.

D. L. Windt, Computers in Physics 12, 360 (1998).

Wu, W.

Xu, Y.

Zhang, S.

Zhang, Z.

Zhou, H.

Zhu, J.

Appl. Phys. Lett. (1)

D. Henderson, M. H. Brodsky, and P. Chaudhari, Appl. Phys. Lett. 25, 641 (1974).

Chin. Opt. Lett. (2)

Computers in Physics (1)

D. L. Windt, Computers in Physics 12, 360 (1998).

Diamond. Relat. Mater. (1)

E. Mounier and Y. Pauleau, Diamond. Relat. Mater. 6, 1182 (1997).

J. Appl. Phys. (1)

H. Windischmann, J. Appl. Phys. 62, 1800 (1987).

J. Vac. Sci. Technol. A (1)

E. Mounier and Y. Pauleau, J. Vac. Sci. Technol. A 14, 2535 (1996).

Metall. Teans. (1)

F. M. d'Heurle, Metall. Teans. 1, 725 (1970).

Proc. SPIE (1)

S. Jacobi, B. Steeg, J. Wiesmann, M. Stormer, J. Feldhaus, R. Bormann, and C. Michaelsen, Proc. SPIE 4782, 113 (2002).

Solid State Commun. (1)

O. Durand-Drouhin and M. Benlahsen, Solid State Commun. 131, 425 (2004).

Thin Solid Films (2)

F. M. d'Heurle and J. M. E. Harper, Thin Solid Films 171, 81 (1989).

C. A. Davis, Thin Solid Films 226, 30 (1993).

Other (1)

http://www-cxro.lbl.gov/als6.3.2/.

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