Abstract

HfO₂/SiO₂ multilayer films were deposited on BK7 glass substrates by electron beam evaporation method. The effects of annealing at the temperature between 200 and 400 centigrade on residual stresses have been studied. It is found that the residual stress of as-deposited HfO₂/SiO₂ multilayers is compressive. It becomes tensile after annealing at 200 centigrade, and then the value of tensile stress increases as annealing temperature increases. And cracks appear in the film because tensile stress is too large when the sample is annealed at 400 centigrade. At the same time, the crystallite size increases and interplanar distance decreases with the increase of annealing temperature. The variation of residual stresses is corresponding with the evolution of structures.

© 2008 Chinese Optics Letters

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