Abstract

In order to improve the optical properties of the III-V laser diodes (LDs) by means of H2S plasma passivation technology, H2S plasma passivation treatment is performed on the GaAs(110) surface. The optimum passivation conditions obtained are 60-W radio frequency (RF) power and 20-min duration. So the laser cavity surfaces are treated under the optimum passivation conditions. Consequently, compared with unpassivated lasers with only AR/HR-coatings, the catastrophic optical damage (COD) threshold value of the passivated lasers by H2S plasma treatment is increased by 33%, which is almost the same as that of (NH4)2Sx treatment. And the life-test experiment has demonstrated that this passivation method is more stable than (NH4)2Sx solution wet-passivated treatment.

© 2008 Chinese Optics Letters

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription