Abstract

Enhancement of light extraction in a GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) consisting of GaN, SnO2 nanorod and an Ag layer was presented. The ODR comprises a transparent, quarterwave layer of SnO2 nanorod claded by silver and serves as an ohmic contact to p-type GaN. Transparent SnO2 sols were obtained by sol-gel method from SnCl 2H2O, and SnO2 thin films were prepared by dip-coating technique. The average size of the spherical SnO2 particles obtained is 200 nm. The refractive index of the nanorod SnO2 film layer is 2.01. The GaInN LEDs with GaN/SnO2/Ag ODR show a lower forward voltage. This was attributed to the enhanced reflectivity of the ODR that employs the nanorod SnO2 film layer. Experimental results show that ODR-LEDs have lower optical losses and higher extraction efficiency as compared to conventional LEDs with Ni/Au contacts and conventional LEDs employing a distributed Bragg reflector (DBR).

© 2008 Chinese Optics Letters

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2006 (2)

N. Li, E.-H. Park, Y. Huang, S. Wang, A. Valencia, B. Nemeth, J. Nause, and I. Ferguson, Proc. SPIE 6337, 63370Z (2006).

J. K. Kim, T. Gessmann, and E. F. Schubert, Appl. Phys. Lett. 88, 013501 (2006).

2005 (3)

D. Kim, H. Lee, N. Cho, Y. Sung, and G. Yeom, Jpn. J. Appl. Phys. 44, L18 (2005).

T.-X. Lee, C.-Y. Lin, S.-H. Ma, and C.-C. Sun, Opt. Express 13, 4715 (2005).

J.-Q. Xi, J. K. Kim, and E. F. Schubert, Nano Lett. 5, 1385 (2005).

2004 (1)

T. Gessmann and E. F. Schubert, J. Appl. Phys. 95, 51 (2004).

2003 (2)

T. Gessmann, Y.-L. Li, E. F. Schubert, J. W. Graff, and J. K. Sheu, Proc. SPIE 4996, 139 (2003).

T. Gessmann, E. F. Schubert, J. W. Graff, K. Streubel, and C. Karnutsch, IEEE Electron. Device Lett. 24, 683 (2003).

Appl. Phys. Lett. (1)

J. K. Kim, T. Gessmann, and E. F. Schubert, Appl. Phys. Lett. 88, 013501 (2006).

IEEE Electron. Device Lett. (1)

T. Gessmann, E. F. Schubert, J. W. Graff, K. Streubel, and C. Karnutsch, IEEE Electron. Device Lett. 24, 683 (2003).

J. Appl. Phys. (1)

T. Gessmann and E. F. Schubert, J. Appl. Phys. 95, 51 (2004).

Jpn. J. Appl. Phys. (1)

D. Kim, H. Lee, N. Cho, Y. Sung, and G. Yeom, Jpn. J. Appl. Phys. 44, L18 (2005).

Nano Lett. (1)

J.-Q. Xi, J. K. Kim, and E. F. Schubert, Nano Lett. 5, 1385 (2005).

Opt. Express (1)

T.-X. Lee, C.-Y. Lin, S.-H. Ma, and C.-C. Sun, Opt. Express 13, 4715 (2005).

Proc. SPIE (2)

N. Li, E.-H. Park, Y. Huang, S. Wang, A. Valencia, B. Nemeth, J. Nause, and I. Ferguson, Proc. SPIE 6337, 63370Z (2006).

T. Gessmann, Y.-L. Li, E. F. Schubert, J. W. Graff, and J. K. Sheu, Proc. SPIE 4996, 139 (2003).

Other (1)

J.-Q. Xi, M. Ojha, W. Cho, C. Wetzel, T. Gessmann, E. F. Schubert, J. L. Plawsky, and W. H. Gill, in Proceedings of CLEO 2005 144 (2005).

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