Abstract

The energy levels and lifetimes of 3pns 3P0(n=7-35) and 3pnd 3P0 (n=6-17) series of neutral silicon are calculated and predicted by means of multichannel quantum defect theory (MQDT). In addition, the perturbation caused by core-excited state 3s3p3 is discussed. The 3pnd 3P0 series, especially 3p4d 3P0, 3p5d 3P0, and 3p6d 3P0 are perturbed strongly by the core-excited state 3s3p3 3P0. These cause the lifetime of 3pnd 3P0 (n=5-7) to be less than that of 3p4d 3P0. The lifetimes of 3p14d 3P0 (65479.14 cm-1) and 3p16d 3P0 (65608.77 cm-1) are less than that of their frontal states respectively, because these states are perturbed by 3p22s 3P0 (65476.48 cm-1) and 3p30s 3P0 (65608.99 cm-1) respectively.

© 2008 Chinese Optics Letters

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription