Abstract

High power diode array module has been fabricated. The epitaxial structure is an InGaAs/GaAsP strain compensated single quantum well. The laser bars are made with a filling factor of 84.6%. The module's quasi-continuous wave (100 microseconds, 1000 Hz) peak power can reach to 88.6 W at a current of 100 A. The central wavelength is 1050 nm and the full width at half maximum is 4.2 nm.

© 2007 Chinese Optics Letters

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  2. M. Yuda, T. Sasaki, J. Temmyo, M. Sugo, and C. Amano, Electron. Lett. 38, 45 (2002).
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  4. D. Schlenker, T. Miyamoto, Z. Chen, F. Koyama, and K. Iga, J. Cryst. Growth 209, 27 (2000).
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2003

M. Yuda, T. Sasaki, J. Temmyo, and M. C. Sugo, IEEE J. Quantum Electron. 39, 1515 (2003).

2002

M. Yuda, T. Sasaki, J. Temmyo, M. Sugo, and C. Amano, Electron. Lett. 38, 45 (2002).

2000

D. Schlenker, T. Miyamoto, Z. Chen, F. Koyama, and K. Iga, J. Cryst. Growth 209, 27 (2000).

L. Hofmann, A. Klehr, F. Bugge, H. Wenzel, V. Smirnitski, J. Sebastian, and G. Erbert, Electron. Lett. 36, 534 (2000).

1990

R. G. Waters, P. K. York, K. J. Beernink, and J. J. Coleman, J. Appl. Phys. 67, 1132 (1990).

Electron. Lett.

M. Yuda, T. Sasaki, J. Temmyo, M. Sugo, and C. Amano, Electron. Lett. 38, 45 (2002).

L. Hofmann, A. Klehr, F. Bugge, H. Wenzel, V. Smirnitski, J. Sebastian, and G. Erbert, Electron. Lett. 36, 534 (2000).

IEEE J. Quantum Electron.

M. Yuda, T. Sasaki, J. Temmyo, and M. C. Sugo, IEEE J. Quantum Electron. 39, 1515 (2003).

J. Appl. Phys.

R. G. Waters, P. K. York, K. J. Beernink, and J. J. Coleman, J. Appl. Phys. 67, 1132 (1990).

J. Cryst. Growth

D. Schlenker, T. Miyamoto, Z. Chen, F. Koyama, and K. Iga, J. Cryst. Growth 209, 27 (2000).

Other

T. Hayakawa, F. Akinaga, T. Kuniyasu, K. Matsumoto, and T. Fukunaga, in Proceedings of Optical Fiber Conf. 2002 (2002).

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