Abstract

The technique of pulsed anodic oxidation is adopted in the fabrication of 980-nm bottom-emitting vertical-cavity surface-emitting lasers. A high-quality native oxide current blocking layer is formed with this method. A significant reduction of threshold current and a distinguished device performance are achieved. The threshold current of large aperture devices with active diameter up to 400 microns is as low as 0.45 A at room temperature, which is substantially lower than the lasers fabricated by SiO2 sputtering. The maximum continuous-wave output power is 0.83 W. The lasing peak wavelength is 990.2 nm, and the full width at half-maximum is 0.9 nm. Low lateral divergence angle of 15.3 deg. and vertical divergence angle of 13.8 deg. are obtained.

© 2007 Chinese Optics Letters

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1999 (1)

P. Schnitzer, M. Grabherr, R. Jager, F. Mederer, R. Michalzik, D. Wiedenmann, and K. J. Ebeling, IEEE Photon. Technol. Lett. 11, 767 (1999).

1998 (2)

I. Burgaftman, J. R. Meyer, and L. R. Ram-Mohan, IEEE J. Quantum Electron. 34, 147 (1998).

Koeth, R. Dietrich, and A. Forchel, Appl. Phys. Lett. 72, 1638 (1998).

1997 (1)

S. Yuan, Y. Kim, C. Jagadish, P. T. Burke, M. Gal, J. Zou, D. Q. Cai, D. J. H. Cockayne, and R. M. Cohen, Appl. Phys. Lett. 70, 1269 (1997).

1996 (1)

H. K. Shin, I. Kim, E. J. Kim, J. H. Kim, E. K. Lee, M. K. Lee, J. K. Mum, C. S. Park, and Y. S. I, Jpn. J. Appl. Phys. 35, 506 (1996).

1995 (1)

C. C. Largent, M. J. Grove, D. A. Hudson, P. S. Zory, and D. P. Bour, Solid-State Electron. 38, 1893 (1995).

1994 (1)

D. L. Hiffaker, J. Shin, H. Deng, C. C. Lin, D. G. Deppe, and B. G. Streetman, Appl. Phys. Lett. 65, 2642 (1994).

1993 (2)

R. P. Schneider, Jr. and J. A. Lott, Appl. Phys. Lett. 63, 917 (1993).

J. H. Marsh, Semiconduct. Sci. Technol. 8, 1136 (1993).

1976 (1)

H. Hasegawa and H. L. Hartnagel, J. Electrochem. Soc. 123, 713 (1976).

1967 (1)

J. C. Dyment, Appl. Phys. Lett. 10, 84 (1967).

Appl. Phys. Lett. (5)

D. L. Hiffaker, J. Shin, H. Deng, C. C. Lin, D. G. Deppe, and B. G. Streetman, Appl. Phys. Lett. 65, 2642 (1994).

R. P. Schneider, Jr. and J. A. Lott, Appl. Phys. Lett. 63, 917 (1993).

Koeth, R. Dietrich, and A. Forchel, Appl. Phys. Lett. 72, 1638 (1998).

J. C. Dyment, Appl. Phys. Lett. 10, 84 (1967).

S. Yuan, Y. Kim, C. Jagadish, P. T. Burke, M. Gal, J. Zou, D. Q. Cai, D. J. H. Cockayne, and R. M. Cohen, Appl. Phys. Lett. 70, 1269 (1997).

IEEE J. Quantum Electron. (1)

I. Burgaftman, J. R. Meyer, and L. R. Ram-Mohan, IEEE J. Quantum Electron. 34, 147 (1998).

IEEE Photon. Technol. Lett. (1)

P. Schnitzer, M. Grabherr, R. Jager, F. Mederer, R. Michalzik, D. Wiedenmann, and K. J. Ebeling, IEEE Photon. Technol. Lett. 11, 767 (1999).

J. Electrochem. Soc. (1)

H. Hasegawa and H. L. Hartnagel, J. Electrochem. Soc. 123, 713 (1976).

Jpn. J. Appl. Phys. (1)

H. K. Shin, I. Kim, E. J. Kim, J. H. Kim, E. K. Lee, M. K. Lee, J. K. Mum, C. S. Park, and Y. S. I, Jpn. J. Appl. Phys. 35, 506 (1996).

Semiconduct. Sci. Technol. (1)

J. H. Marsh, Semiconduct. Sci. Technol. 8, 1136 (1993).

Solid-State Electron. (1)

C. C. Largent, M. J. Grove, D. A. Hudson, P. S. Zory, and D. P. Bour, Solid-State Electron. 38, 1893 (1995).

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