Abstract

ZnS films were deposited by pulsed laser deposition (PLD) on porous silicon (PS) substrates formed by electrochemical anodization of p-type (100) silicon wafer. The photoluminescence (PL) spectra of ZnS/PS composites were measured at room temperature. Under different excitation wavelengths, the relative integrated intensities of the red light emission from PS layers and the blue-green emission from ZnS films had different values. After samples were annealed in vacuum at different temperatures (200, 300, and 400 Celsius degree) for 30 min respectively, a new green emission located at around 550 nm appeared in the PL spectra of all ZnS/PS samples, and all of the ZnS/PS composites had a broad PL band (450-700 nm) in the visible region, exhibiting intensively white light emission.

© 2007 Chinese Optics Letters

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  1. J. Kido, M. Kimura, and K. Nagai, Science 267, 1332 (1995).
  2. C. W. Ko and Y. T. Tao, Appl. Phys. Lett. 79, 4234 (2001).
  3. S. Tokito, T. Lijima, T. Tsuzuki, and F. Sato, Appl. Phys. Lett. 83, 2459 (2003).
  4. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
  5. Y. Yang, Q. Li, and X. Liu, Chin. Opt. Lett. 4, 297 (2006).
  6. A. Gokarna, S. V. Bhoraskar, N. R. Pavaskar, and S. D. Sathaye, Phys. Stat. Sol. (a) 182, 175 (2000).
  7. A. Gokarna, N. R. Pavaskar, S. D. Sathaye, V. Ganesan, and S. V. Bhoraskar, J. Appl. Phys. 92, 2118 (2002).
  8. L. Wang, Y. Xia, J. Ju, Y. Fan, W. Zhang, Y. Mo, W. Shi, and W. Sang, Acta Opt. Sin. (in Chinese) 21, 753 (2001).
  9. Y. Bai, Y. Lan, H. Zhu, and Y. Mo, Acta Opt. Sin. (in Chinese) 25, 1712 (2005).
  10. Q. Chen, D. Zhu, C. Zhu, J. Wang, and Y. Zhang, Appl. Phys. Lett. 82, 1018 (2003).
  11. Y. Liu, Y. Liu, H. Yang, W. Wang, J. Ma, J. Zhang, Y. Lu, D. Shen, and X. Fan, J. Phys. D 36, 2705 (2003).
  12. S. Yano, R. Schroeder, H. Sakai, and B. Ullrich, Appl. Phys. Lett. 82, 2026 (2003).
  13. S. Velumani and J. A. Ascencio, Appl. Phys. A 79, 153 (2004).
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  15. C. Wang, Q. Li, L. Lu, L. Zhang, H. Qi, and H. Chen, Chin. Phys. Lett. 24, 825 (2007).
  16. T. B. Nasrallah, M. Amlouk, J. C. Bernede, and S. Belgacem, Phys. Stat. Sol. (a) 201, 3070 (2004).
  17. N. K. Morozova, I. A. Karetnikov, V. G. Plotnichenko, E. M. Gavrishchuk, E. V. Yashina, and V. B. Ikonnikov, Semiconductors 38, 36 (2004).
  18. S. M. Prokes, J. A. Freitas, and P. C. Searson, Appl. Phys. Lett. 60, 3295 (1992).

2007 (1)

C. Wang, Q. Li, L. Lu, L. Zhang, H. Qi, and H. Chen, Chin. Phys. Lett. 24, 825 (2007).

2006 (1)

2005 (1)

Y. Bai, Y. Lan, H. Zhu, and Y. Mo, Acta Opt. Sin. (in Chinese) 25, 1712 (2005).

2004 (3)

S. Velumani and J. A. Ascencio, Appl. Phys. A 79, 153 (2004).

T. B. Nasrallah, M. Amlouk, J. C. Bernede, and S. Belgacem, Phys. Stat. Sol. (a) 201, 3070 (2004).

N. K. Morozova, I. A. Karetnikov, V. G. Plotnichenko, E. M. Gavrishchuk, E. V. Yashina, and V. B. Ikonnikov, Semiconductors 38, 36 (2004).

2003 (4)

S. Tokito, T. Lijima, T. Tsuzuki, and F. Sato, Appl. Phys. Lett. 83, 2459 (2003).

Q. Chen, D. Zhu, C. Zhu, J. Wang, and Y. Zhang, Appl. Phys. Lett. 82, 1018 (2003).

Y. Liu, Y. Liu, H. Yang, W. Wang, J. Ma, J. Zhang, Y. Lu, D. Shen, and X. Fan, J. Phys. D 36, 2705 (2003).

S. Yano, R. Schroeder, H. Sakai, and B. Ullrich, Appl. Phys. Lett. 82, 2026 (2003).

2002 (1)

A. Gokarna, N. R. Pavaskar, S. D. Sathaye, V. Ganesan, and S. V. Bhoraskar, J. Appl. Phys. 92, 2118 (2002).

2001 (2)

L. Wang, Y. Xia, J. Ju, Y. Fan, W. Zhang, Y. Mo, W. Shi, and W. Sang, Acta Opt. Sin. (in Chinese) 21, 753 (2001).

C. W. Ko and Y. T. Tao, Appl. Phys. Lett. 79, 4234 (2001).

2000 (1)

A. Gokarna, S. V. Bhoraskar, N. R. Pavaskar, and S. D. Sathaye, Phys. Stat. Sol. (a) 182, 175 (2000).

1995 (1)

J. Kido, M. Kimura, and K. Nagai, Science 267, 1332 (1995).

1993 (1)

M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy, T. Morrow, S. Laverty, and J. Anderson, Appl. Phys. Lett. 63, 1865 (1993).

1992 (1)

S. M. Prokes, J. A. Freitas, and P. C. Searson, Appl. Phys. Lett. 60, 3295 (1992).

1990 (1)

L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

Amlouk, M.

T. B. Nasrallah, M. Amlouk, J. C. Bernede, and S. Belgacem, Phys. Stat. Sol. (a) 201, 3070 (2004).

Anderson, J.

M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy, T. Morrow, S. Laverty, and J. Anderson, Appl. Phys. Lett. 63, 1865 (1993).

Ascencio, J. A.

S. Velumani and J. A. Ascencio, Appl. Phys. A 79, 153 (2004).

Bai, Y.

Y. Bai, Y. Lan, H. Zhu, and Y. Mo, Acta Opt. Sin. (in Chinese) 25, 1712 (2005).

Belgacem, S.

T. B. Nasrallah, M. Amlouk, J. C. Bernede, and S. Belgacem, Phys. Stat. Sol. (a) 201, 3070 (2004).

Bernede, J. C.

T. B. Nasrallah, M. Amlouk, J. C. Bernede, and S. Belgacem, Phys. Stat. Sol. (a) 201, 3070 (2004).

Bhoraskar, S. V.

A. Gokarna, N. R. Pavaskar, S. D. Sathaye, V. Ganesan, and S. V. Bhoraskar, J. Appl. Phys. 92, 2118 (2002).

A. Gokarna, S. V. Bhoraskar, N. R. Pavaskar, and S. D. Sathaye, Phys. Stat. Sol. (a) 182, 175 (2000).

Canham, L. T.

L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

Chen, H.

C. Wang, Q. Li, L. Lu, L. Zhang, H. Qi, and H. Chen, Chin. Phys. Lett. 24, 825 (2007).

Chen, Q.

Q. Chen, D. Zhu, C. Zhu, J. Wang, and Y. Zhang, Appl. Phys. Lett. 82, 1018 (2003).

Fan, X.

Y. Liu, Y. Liu, H. Yang, W. Wang, J. Ma, J. Zhang, Y. Lu, D. Shen, and X. Fan, J. Phys. D 36, 2705 (2003).

Fan, Y.

L. Wang, Y. Xia, J. Ju, Y. Fan, W. Zhang, Y. Mo, W. Shi, and W. Sang, Acta Opt. Sin. (in Chinese) 21, 753 (2001).

Freitas, J. A.

S. M. Prokes, J. A. Freitas, and P. C. Searson, Appl. Phys. Lett. 60, 3295 (1992).

Ganesan, V.

A. Gokarna, N. R. Pavaskar, S. D. Sathaye, V. Ganesan, and S. V. Bhoraskar, J. Appl. Phys. 92, 2118 (2002).

Gavrishchuk, E. M.

N. K. Morozova, I. A. Karetnikov, V. G. Plotnichenko, E. M. Gavrishchuk, E. V. Yashina, and V. B. Ikonnikov, Semiconductors 38, 36 (2004).

Gokarna, A.

A. Gokarna, N. R. Pavaskar, S. D. Sathaye, V. Ganesan, and S. V. Bhoraskar, J. Appl. Phys. 92, 2118 (2002).

A. Gokarna, S. V. Bhoraskar, N. R. Pavaskar, and S. D. Sathaye, Phys. Stat. Sol. (a) 182, 175 (2000).

Graham, W. G.

M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy, T. Morrow, S. Laverty, and J. Anderson, Appl. Phys. Lett. 63, 1865 (1993).

Ikonnikov, V. B.

N. K. Morozova, I. A. Karetnikov, V. G. Plotnichenko, E. M. Gavrishchuk, E. V. Yashina, and V. B. Ikonnikov, Semiconductors 38, 36 (2004).

Ju, J.

L. Wang, Y. Xia, J. Ju, Y. Fan, W. Zhang, Y. Mo, W. Shi, and W. Sang, Acta Opt. Sin. (in Chinese) 21, 753 (2001).

Karetnikov, I. A.

N. K. Morozova, I. A. Karetnikov, V. G. Plotnichenko, E. M. Gavrishchuk, E. V. Yashina, and V. B. Ikonnikov, Semiconductors 38, 36 (2004).

Kido, J.

J. Kido, M. Kimura, and K. Nagai, Science 267, 1332 (1995).

Kimura, M.

J. Kido, M. Kimura, and K. Nagai, Science 267, 1332 (1995).

Ko, C. W.

C. W. Ko and Y. T. Tao, Appl. Phys. Lett. 79, 4234 (2001).

Lan, Y.

Y. Bai, Y. Lan, H. Zhu, and Y. Mo, Acta Opt. Sin. (in Chinese) 25, 1712 (2005).

Laverty, S.

M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy, T. Morrow, S. Laverty, and J. Anderson, Appl. Phys. Lett. 63, 1865 (1993).

Li, Q.

C. Wang, Q. Li, L. Lu, L. Zhang, H. Qi, and H. Chen, Chin. Phys. Lett. 24, 825 (2007).

Y. Yang, Q. Li, and X. Liu, Chin. Opt. Lett. 4, 297 (2006).

Lijima, T.

S. Tokito, T. Lijima, T. Tsuzuki, and F. Sato, Appl. Phys. Lett. 83, 2459 (2003).

Liu, X.

Liu, Y.

Y. Liu, Y. Liu, H. Yang, W. Wang, J. Ma, J. Zhang, Y. Lu, D. Shen, and X. Fan, J. Phys. D 36, 2705 (2003).

Y. Liu, Y. Liu, H. Yang, W. Wang, J. Ma, J. Zhang, Y. Lu, D. Shen, and X. Fan, J. Phys. D 36, 2705 (2003).

Lu, L.

C. Wang, Q. Li, L. Lu, L. Zhang, H. Qi, and H. Chen, Chin. Phys. Lett. 24, 825 (2007).

Lu, Y.

Y. Liu, Y. Liu, H. Yang, W. Wang, J. Ma, J. Zhang, Y. Lu, D. Shen, and X. Fan, J. Phys. D 36, 2705 (2003).

Ma, J.

Y. Liu, Y. Liu, H. Yang, W. Wang, J. Ma, J. Zhang, Y. Lu, D. Shen, and X. Fan, J. Phys. D 36, 2705 (2003).

Maguire, P.

M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy, T. Morrow, S. Laverty, and J. Anderson, Appl. Phys. Lett. 63, 1865 (1993).

McLaughlin, M.

M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy, T. Morrow, S. Laverty, and J. Anderson, Appl. Phys. Lett. 63, 1865 (1993).

Mo, Y.

Y. Bai, Y. Lan, H. Zhu, and Y. Mo, Acta Opt. Sin. (in Chinese) 25, 1712 (2005).

L. Wang, Y. Xia, J. Ju, Y. Fan, W. Zhang, Y. Mo, W. Shi, and W. Sang, Acta Opt. Sin. (in Chinese) 21, 753 (2001).

Molloy, J.

M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy, T. Morrow, S. Laverty, and J. Anderson, Appl. Phys. Lett. 63, 1865 (1993).

Morozova, N. K.

N. K. Morozova, I. A. Karetnikov, V. G. Plotnichenko, E. M. Gavrishchuk, E. V. Yashina, and V. B. Ikonnikov, Semiconductors 38, 36 (2004).

Morrow, T.

M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy, T. Morrow, S. Laverty, and J. Anderson, Appl. Phys. Lett. 63, 1865 (1993).

Nagai, K.

J. Kido, M. Kimura, and K. Nagai, Science 267, 1332 (1995).

Nasrallah, T. B.

T. B. Nasrallah, M. Amlouk, J. C. Bernede, and S. Belgacem, Phys. Stat. Sol. (a) 201, 3070 (2004).

Pavaskar, N. R.

A. Gokarna, N. R. Pavaskar, S. D. Sathaye, V. Ganesan, and S. V. Bhoraskar, J. Appl. Phys. 92, 2118 (2002).

A. Gokarna, S. V. Bhoraskar, N. R. Pavaskar, and S. D. Sathaye, Phys. Stat. Sol. (a) 182, 175 (2000).

Plotnichenko, V. G.

N. K. Morozova, I. A. Karetnikov, V. G. Plotnichenko, E. M. Gavrishchuk, E. V. Yashina, and V. B. Ikonnikov, Semiconductors 38, 36 (2004).

Prokes, S. M.

S. M. Prokes, J. A. Freitas, and P. C. Searson, Appl. Phys. Lett. 60, 3295 (1992).

Qi, H.

C. Wang, Q. Li, L. Lu, L. Zhang, H. Qi, and H. Chen, Chin. Phys. Lett. 24, 825 (2007).

Sakai, H.

S. Yano, R. Schroeder, H. Sakai, and B. Ullrich, Appl. Phys. Lett. 82, 2026 (2003).

Sakeek, H. F.

M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy, T. Morrow, S. Laverty, and J. Anderson, Appl. Phys. Lett. 63, 1865 (1993).

Sang, W.

L. Wang, Y. Xia, J. Ju, Y. Fan, W. Zhang, Y. Mo, W. Shi, and W. Sang, Acta Opt. Sin. (in Chinese) 21, 753 (2001).

Sathaye, S. D.

A. Gokarna, N. R. Pavaskar, S. D. Sathaye, V. Ganesan, and S. V. Bhoraskar, J. Appl. Phys. 92, 2118 (2002).

A. Gokarna, S. V. Bhoraskar, N. R. Pavaskar, and S. D. Sathaye, Phys. Stat. Sol. (a) 182, 175 (2000).

Sato, F.

S. Tokito, T. Lijima, T. Tsuzuki, and F. Sato, Appl. Phys. Lett. 83, 2459 (2003).

Schroeder, R.

S. Yano, R. Schroeder, H. Sakai, and B. Ullrich, Appl. Phys. Lett. 82, 2026 (2003).

Searson, P. C.

S. M. Prokes, J. A. Freitas, and P. C. Searson, Appl. Phys. Lett. 60, 3295 (1992).

Shen, D.

Y. Liu, Y. Liu, H. Yang, W. Wang, J. Ma, J. Zhang, Y. Lu, D. Shen, and X. Fan, J. Phys. D 36, 2705 (2003).

Shi, W.

L. Wang, Y. Xia, J. Ju, Y. Fan, W. Zhang, Y. Mo, W. Shi, and W. Sang, Acta Opt. Sin. (in Chinese) 21, 753 (2001).

Tao, Y. T.

C. W. Ko and Y. T. Tao, Appl. Phys. Lett. 79, 4234 (2001).

Tokito, S.

S. Tokito, T. Lijima, T. Tsuzuki, and F. Sato, Appl. Phys. Lett. 83, 2459 (2003).

Tsuzuki, T.

S. Tokito, T. Lijima, T. Tsuzuki, and F. Sato, Appl. Phys. Lett. 83, 2459 (2003).

Ullrich, B.

S. Yano, R. Schroeder, H. Sakai, and B. Ullrich, Appl. Phys. Lett. 82, 2026 (2003).

Velumani, S.

S. Velumani and J. A. Ascencio, Appl. Phys. A 79, 153 (2004).

Wang, C.

C. Wang, Q. Li, L. Lu, L. Zhang, H. Qi, and H. Chen, Chin. Phys. Lett. 24, 825 (2007).

Wang, J.

Q. Chen, D. Zhu, C. Zhu, J. Wang, and Y. Zhang, Appl. Phys. Lett. 82, 1018 (2003).

Wang, L.

L. Wang, Y. Xia, J. Ju, Y. Fan, W. Zhang, Y. Mo, W. Shi, and W. Sang, Acta Opt. Sin. (in Chinese) 21, 753 (2001).

Wang, W.

Y. Liu, Y. Liu, H. Yang, W. Wang, J. Ma, J. Zhang, Y. Lu, D. Shen, and X. Fan, J. Phys. D 36, 2705 (2003).

Xia, Y.

L. Wang, Y. Xia, J. Ju, Y. Fan, W. Zhang, Y. Mo, W. Shi, and W. Sang, Acta Opt. Sin. (in Chinese) 21, 753 (2001).

Yang, H.

Y. Liu, Y. Liu, H. Yang, W. Wang, J. Ma, J. Zhang, Y. Lu, D. Shen, and X. Fan, J. Phys. D 36, 2705 (2003).

Yang, Y.

Yano, S.

S. Yano, R. Schroeder, H. Sakai, and B. Ullrich, Appl. Phys. Lett. 82, 2026 (2003).

Yashina, E. V.

N. K. Morozova, I. A. Karetnikov, V. G. Plotnichenko, E. M. Gavrishchuk, E. V. Yashina, and V. B. Ikonnikov, Semiconductors 38, 36 (2004).

Zhang, J.

Y. Liu, Y. Liu, H. Yang, W. Wang, J. Ma, J. Zhang, Y. Lu, D. Shen, and X. Fan, J. Phys. D 36, 2705 (2003).

Zhang, L.

C. Wang, Q. Li, L. Lu, L. Zhang, H. Qi, and H. Chen, Chin. Phys. Lett. 24, 825 (2007).

Zhang, W.

L. Wang, Y. Xia, J. Ju, Y. Fan, W. Zhang, Y. Mo, W. Shi, and W. Sang, Acta Opt. Sin. (in Chinese) 21, 753 (2001).

Zhang, Y.

Q. Chen, D. Zhu, C. Zhu, J. Wang, and Y. Zhang, Appl. Phys. Lett. 82, 1018 (2003).

Zhu, C.

Q. Chen, D. Zhu, C. Zhu, J. Wang, and Y. Zhang, Appl. Phys. Lett. 82, 1018 (2003).

Zhu, D.

Q. Chen, D. Zhu, C. Zhu, J. Wang, and Y. Zhang, Appl. Phys. Lett. 82, 1018 (2003).

Zhu, H.

Y. Bai, Y. Lan, H. Zhu, and Y. Mo, Acta Opt. Sin. (in Chinese) 25, 1712 (2005).

Acta Opt. Sin. (in Chinese) (2)

L. Wang, Y. Xia, J. Ju, Y. Fan, W. Zhang, Y. Mo, W. Shi, and W. Sang, Acta Opt. Sin. (in Chinese) 21, 753 (2001).

Y. Bai, Y. Lan, H. Zhu, and Y. Mo, Acta Opt. Sin. (in Chinese) 25, 1712 (2005).

Appl. Phys. A (1)

S. Velumani and J. A. Ascencio, Appl. Phys. A 79, 153 (2004).

Appl. Phys. Lett. (7)

M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy, T. Morrow, S. Laverty, and J. Anderson, Appl. Phys. Lett. 63, 1865 (1993).

Q. Chen, D. Zhu, C. Zhu, J. Wang, and Y. Zhang, Appl. Phys. Lett. 82, 1018 (2003).

S. M. Prokes, J. A. Freitas, and P. C. Searson, Appl. Phys. Lett. 60, 3295 (1992).

C. W. Ko and Y. T. Tao, Appl. Phys. Lett. 79, 4234 (2001).

S. Tokito, T. Lijima, T. Tsuzuki, and F. Sato, Appl. Phys. Lett. 83, 2459 (2003).

L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

S. Yano, R. Schroeder, H. Sakai, and B. Ullrich, Appl. Phys. Lett. 82, 2026 (2003).

Chin. Opt. Lett. (1)

Chin. Phys. Lett. (1)

C. Wang, Q. Li, L. Lu, L. Zhang, H. Qi, and H. Chen, Chin. Phys. Lett. 24, 825 (2007).

J. Appl. Phys. (1)

A. Gokarna, N. R. Pavaskar, S. D. Sathaye, V. Ganesan, and S. V. Bhoraskar, J. Appl. Phys. 92, 2118 (2002).

J. Phys. D (1)

Y. Liu, Y. Liu, H. Yang, W. Wang, J. Ma, J. Zhang, Y. Lu, D. Shen, and X. Fan, J. Phys. D 36, 2705 (2003).

Phys. Stat. Sol. (a) (2)

T. B. Nasrallah, M. Amlouk, J. C. Bernede, and S. Belgacem, Phys. Stat. Sol. (a) 201, 3070 (2004).

A. Gokarna, S. V. Bhoraskar, N. R. Pavaskar, and S. D. Sathaye, Phys. Stat. Sol. (a) 182, 175 (2000).

Science (1)

J. Kido, M. Kimura, and K. Nagai, Science 267, 1332 (1995).

Semiconductors (1)

N. K. Morozova, I. A. Karetnikov, V. G. Plotnichenko, E. M. Gavrishchuk, E. V. Yashina, and V. B. Ikonnikov, Semiconductors 38, 36 (2004).

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