Abstract

Using two-step method InP epilayers were grown on GaAs(100) substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). X-ray diffraction (XRD) and room-temperature (RT) photoluminescence (PL) were employed to characterize the quality of InP epilayer. The best scheme of growing InP/GaAs(100) heterostructures was obtained by optimizing the initial low-temperature (LT) InP growth conditions, investigating the effects of thermal cycle annealing (TCA) and strained layer superlattice (SLS) on InP epilayers. Compared with annealing, 10-period Ga0.1In0.9P/InP SLS inserted into InP epilayers can improve the quality of epilayers dramatically, by this means, for 2.6-micron-thick heteroepitaxial InP, the full-widths at half-maximum (FWHMs) of XRD 'omega' and 'omega'-2'theta' scans are 219 and 203 arcsec, respectively, the RT PL spectrum shows the band edge transition of InP, the FWHM is 42 meV. In addition, the successful growth of InP/In0.53Ga0.47As MQWs on GaAs(100) substrates indicates the quality of device demand of InP/GaAs heterostructures.

© 2007 Chinese Optics Letters

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  1. Y. M. Kim, M. Dahlstrom, S. Lee, M. J. W. Rodwell, and A. C. Gossard, Solid-State Electron. 46, 1541 (2002).
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  3. M. K. Lee, D. S. Wuu, and H. H. Tung, J. Appl. Phys. 62, 3209 (1987).
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2006 (2)

C. Zheng, L. Wang, W. Fang, Y. Pu, J. Dai, and F. Jiang, Acta Opt. Sin. (in Chinese) 26, 463 (2006).

A. Ren, X. Ren, Q. Wang, D. Xiong, H. Huang, and Y. Huang, Microelectron. J. 37, 700 (2006).

2004 (1)

K. Radhakrishnan, K. Yuan, and W. Hong, J. Non-Cryst. Growth 261, 16 (2004).

2003 (1)

C.-I. Liao, K.-F. Yarn, C.-L. Lin, Y.-L. Lin, and Y.-H. Wang, Jpn. J. Appl. Phys. 42, 4913 (2003).

2002 (2)

Y. M. Kim, M. Dahlstrom, S. Lee, M. J. W. Rodwell, and A. C. Gossard, Solid-State Electron. 46, 1541 (2002).

Z. Zhang, S. Yang, F. Zhang, and D. Li, J. Non-Cryst. Growth 243, 71 (2002).

2001 (1)

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, IEEE Photon. Technol. Lett. 13, 151 (2001).

2000 (1)

M. A. Hayashi and R. Marcon, Rev. Physicae 1, 21 (2000).

1998 (1)

M. B. Derbali, J. Meddeb, H. Maaref, D. Buttard, P. Abraham, and Y. Monteil, J. Non. Cryst. Growth 84, 503 (1998).

1996 (1)

Y. Takano, T. Sasaki, Y. Nagaki, K. Kuwahara, S. Fuke, and T. Imai, J. Non-Cryst. Growth 169, 621 (1996).

1995 (2)

T. W. Kim, M. Jung, T. H. Park, J. W. Cho, and H. L. Park, Thin Solid Films 257, 36 (1995).

H. Uchida, T. Soga, H. Nishikawa, T. Jimbo, and M. Umeno, J. Non-Cryst. Growth 150, 681 (1995).

1994 (1)

Y. Okuno, T. Kawano, M. Koguchi, and K. Nakamura, J. Non-Cryst. Growth 137, 313 (1994).

1989 (1)

J. P. Hirth and X. X. Feng, J. Appl. Phys. 67, 3343 (1989).

1988 (1)

M. Yamaguchi, A. Yamamo, M. Tachikawa, Y. Itoh, and M. Sugo, Appl. Phys. Lett. 53, 2293 (1988).

1987 (1)

M. K. Lee, D. S. Wuu, and H. H. Tung, J. Appl. Phys. 62, 3209 (1987).

Abraham, P.

M. B. Derbali, J. Meddeb, H. Maaref, D. Buttard, P. Abraham, and Y. Monteil, J. Non. Cryst. Growth 84, 503 (1998).

Adesida, I.

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, IEEE Photon. Technol. Lett. 13, 151 (2001).

Buttard, D.

M. B. Derbali, J. Meddeb, H. Maaref, D. Buttard, P. Abraham, and Y. Monteil, J. Non. Cryst. Growth 84, 503 (1998).

Cho, J. W.

T. W. Kim, M. Jung, T. H. Park, J. W. Cho, and H. L. Park, Thin Solid Films 257, 36 (1995).

Cueva, G.

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, IEEE Photon. Technol. Lett. 13, 151 (2001).

Dahlstrom, M.

Y. M. Kim, M. Dahlstrom, S. Lee, M. J. W. Rodwell, and A. C. Gossard, Solid-State Electron. 46, 1541 (2002).

Dai, J.

C. Zheng, L. Wang, W. Fang, Y. Pu, J. Dai, and F. Jiang, Acta Opt. Sin. (in Chinese) 26, 463 (2006).

Derbali, M. B.

M. B. Derbali, J. Meddeb, H. Maaref, D. Buttard, P. Abraham, and Y. Monteil, J. Non. Cryst. Growth 84, 503 (1998).

Dumka, D. C.

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, IEEE Photon. Technol. Lett. 13, 151 (2001).

Fang, W.

C. Zheng, L. Wang, W. Fang, Y. Pu, J. Dai, and F. Jiang, Acta Opt. Sin. (in Chinese) 26, 463 (2006).

Feng, X. X.

J. P. Hirth and X. X. Feng, J. Appl. Phys. 67, 3343 (1989).

Fuke, S.

Y. Takano, T. Sasaki, Y. Nagaki, K. Kuwahara, S. Fuke, and T. Imai, J. Non-Cryst. Growth 169, 621 (1996).

Gossard, A. C.

Y. M. Kim, M. Dahlstrom, S. Lee, M. J. W. Rodwell, and A. C. Gossard, Solid-State Electron. 46, 1541 (2002).

Hayashi, M. A.

M. A. Hayashi and R. Marcon, Rev. Physicae 1, 21 (2000).

Hirth, J. P.

J. P. Hirth and X. X. Feng, J. Appl. Phys. 67, 3343 (1989).

Hoke, W. E.

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, IEEE Photon. Technol. Lett. 13, 151 (2001).

Hong, W.

K. Radhakrishnan, K. Yuan, and W. Hong, J. Non-Cryst. Growth 261, 16 (2004).

Huang, H.

A. Ren, X. Ren, Q. Wang, D. Xiong, H. Huang, and Y. Huang, Microelectron. J. 37, 700 (2006).

Huang, Y.

A. Ren, X. Ren, Q. Wang, D. Xiong, H. Huang, and Y. Huang, Microelectron. J. 37, 700 (2006).

Imai, T.

Y. Takano, T. Sasaki, Y. Nagaki, K. Kuwahara, S. Fuke, and T. Imai, J. Non-Cryst. Growth 169, 621 (1996).

Itoh, Y.

M. Yamaguchi, A. Yamamo, M. Tachikawa, Y. Itoh, and M. Sugo, Appl. Phys. Lett. 53, 2293 (1988).

Jang, J. H.

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, IEEE Photon. Technol. Lett. 13, 151 (2001).

Jiang, F.

C. Zheng, L. Wang, W. Fang, Y. Pu, J. Dai, and F. Jiang, Acta Opt. Sin. (in Chinese) 26, 463 (2006).

Jimbo, T.

H. Uchida, T. Soga, H. Nishikawa, T. Jimbo, and M. Umeno, J. Non-Cryst. Growth 150, 681 (1995).

Jung, M.

T. W. Kim, M. Jung, T. H. Park, J. W. Cho, and H. L. Park, Thin Solid Films 257, 36 (1995).

Kawano, T.

Y. Okuno, T. Kawano, M. Koguchi, and K. Nakamura, J. Non-Cryst. Growth 137, 313 (1994).

Kim, T. W.

T. W. Kim, M. Jung, T. H. Park, J. W. Cho, and H. L. Park, Thin Solid Films 257, 36 (1995).

Kim, Y. M.

Y. M. Kim, M. Dahlstrom, S. Lee, M. J. W. Rodwell, and A. C. Gossard, Solid-State Electron. 46, 1541 (2002).

Koguchi, M.

Y. Okuno, T. Kawano, M. Koguchi, and K. Nakamura, J. Non-Cryst. Growth 137, 313 (1994).

Kuwahara, K.

Y. Takano, T. Sasaki, Y. Nagaki, K. Kuwahara, S. Fuke, and T. Imai, J. Non-Cryst. Growth 169, 621 (1996).

Lee, M. K.

M. K. Lee, D. S. Wuu, and H. H. Tung, J. Appl. Phys. 62, 3209 (1987).

Lee, S.

Y. M. Kim, M. Dahlstrom, S. Lee, M. J. W. Rodwell, and A. C. Gossard, Solid-State Electron. 46, 1541 (2002).

Lemonias, P. J.

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, IEEE Photon. Technol. Lett. 13, 151 (2001).

Li, D.

Z. Zhang, S. Yang, F. Zhang, and D. Li, J. Non-Cryst. Growth 243, 71 (2002).

Liao, C.-I.

C.-I. Liao, K.-F. Yarn, C.-L. Lin, Y.-L. Lin, and Y.-H. Wang, Jpn. J. Appl. Phys. 42, 4913 (2003).

Lin, C.-L.

C.-I. Liao, K.-F. Yarn, C.-L. Lin, Y.-L. Lin, and Y.-H. Wang, Jpn. J. Appl. Phys. 42, 4913 (2003).

Lin, Y.-L.

C.-I. Liao, K.-F. Yarn, C.-L. Lin, Y.-L. Lin, and Y.-H. Wang, Jpn. J. Appl. Phys. 42, 4913 (2003).

Maaref, H.

M. B. Derbali, J. Meddeb, H. Maaref, D. Buttard, P. Abraham, and Y. Monteil, J. Non. Cryst. Growth 84, 503 (1998).

Marcon, R.

M. A. Hayashi and R. Marcon, Rev. Physicae 1, 21 (2000).

Meddeb, J.

M. B. Derbali, J. Meddeb, H. Maaref, D. Buttard, P. Abraham, and Y. Monteil, J. Non. Cryst. Growth 84, 503 (1998).

Monteil, Y.

M. B. Derbali, J. Meddeb, H. Maaref, D. Buttard, P. Abraham, and Y. Monteil, J. Non. Cryst. Growth 84, 503 (1998).

Nagaki, Y.

Y. Takano, T. Sasaki, Y. Nagaki, K. Kuwahara, S. Fuke, and T. Imai, J. Non-Cryst. Growth 169, 621 (1996).

Nakamura, K.

Y. Okuno, T. Kawano, M. Koguchi, and K. Nakamura, J. Non-Cryst. Growth 137, 313 (1994).

Nishikawa, H.

H. Uchida, T. Soga, H. Nishikawa, T. Jimbo, and M. Umeno, J. Non-Cryst. Growth 150, 681 (1995).

Okuno, Y.

Y. Okuno, T. Kawano, M. Koguchi, and K. Nakamura, J. Non-Cryst. Growth 137, 313 (1994).

Park, H. L.

T. W. Kim, M. Jung, T. H. Park, J. W. Cho, and H. L. Park, Thin Solid Films 257, 36 (1995).

Park, T. H.

T. W. Kim, M. Jung, T. H. Park, J. W. Cho, and H. L. Park, Thin Solid Films 257, 36 (1995).

Pu, Y.

C. Zheng, L. Wang, W. Fang, Y. Pu, J. Dai, and F. Jiang, Acta Opt. Sin. (in Chinese) 26, 463 (2006).

Radhakrishnan, K.

K. Radhakrishnan, K. Yuan, and W. Hong, J. Non-Cryst. Growth 261, 16 (2004).

Ren, A.

A. Ren, X. Ren, Q. Wang, D. Xiong, H. Huang, and Y. Huang, Microelectron. J. 37, 700 (2006).

Ren, X.

A. Ren, X. Ren, Q. Wang, D. Xiong, H. Huang, and Y. Huang, Microelectron. J. 37, 700 (2006).

Rodwell, M. J. W.

Y. M. Kim, M. Dahlstrom, S. Lee, M. J. W. Rodwell, and A. C. Gossard, Solid-State Electron. 46, 1541 (2002).

Sasaki, T.

Y. Takano, T. Sasaki, Y. Nagaki, K. Kuwahara, S. Fuke, and T. Imai, J. Non-Cryst. Growth 169, 621 (1996).

Soga, T.

H. Uchida, T. Soga, H. Nishikawa, T. Jimbo, and M. Umeno, J. Non-Cryst. Growth 150, 681 (1995).

Sugo, M.

M. Yamaguchi, A. Yamamo, M. Tachikawa, Y. Itoh, and M. Sugo, Appl. Phys. Lett. 53, 2293 (1988).

Tachikawa, M.

M. Yamaguchi, A. Yamamo, M. Tachikawa, Y. Itoh, and M. Sugo, Appl. Phys. Lett. 53, 2293 (1988).

Takano, Y.

Y. Takano, T. Sasaki, Y. Nagaki, K. Kuwahara, S. Fuke, and T. Imai, J. Non-Cryst. Growth 169, 621 (1996).

Tung, H. H.

M. K. Lee, D. S. Wuu, and H. H. Tung, J. Appl. Phys. 62, 3209 (1987).

Uchida, H.

H. Uchida, T. Soga, H. Nishikawa, T. Jimbo, and M. Umeno, J. Non-Cryst. Growth 150, 681 (1995).

Umeno, M.

H. Uchida, T. Soga, H. Nishikawa, T. Jimbo, and M. Umeno, J. Non-Cryst. Growth 150, 681 (1995).

Wang, L.

C. Zheng, L. Wang, W. Fang, Y. Pu, J. Dai, and F. Jiang, Acta Opt. Sin. (in Chinese) 26, 463 (2006).

Wang, Q.

A. Ren, X. Ren, Q. Wang, D. Xiong, H. Huang, and Y. Huang, Microelectron. J. 37, 700 (2006).

Wang, Y.-H.

C.-I. Liao, K.-F. Yarn, C.-L. Lin, Y.-L. Lin, and Y.-H. Wang, Jpn. J. Appl. Phys. 42, 4913 (2003).

Wuu, D. S.

M. K. Lee, D. S. Wuu, and H. H. Tung, J. Appl. Phys. 62, 3209 (1987).

Xiong, D.

A. Ren, X. Ren, Q. Wang, D. Xiong, H. Huang, and Y. Huang, Microelectron. J. 37, 700 (2006).

Yamaguchi, M.

M. Yamaguchi, A. Yamamo, M. Tachikawa, Y. Itoh, and M. Sugo, Appl. Phys. Lett. 53, 2293 (1988).

Yamamo, A.

M. Yamaguchi, A. Yamamo, M. Tachikawa, Y. Itoh, and M. Sugo, Appl. Phys. Lett. 53, 2293 (1988).

Yang, S.

Z. Zhang, S. Yang, F. Zhang, and D. Li, J. Non-Cryst. Growth 243, 71 (2002).

Yarn, K.-F.

C.-I. Liao, K.-F. Yarn, C.-L. Lin, Y.-L. Lin, and Y.-H. Wang, Jpn. J. Appl. Phys. 42, 4913 (2003).

Yuan, K.

K. Radhakrishnan, K. Yuan, and W. Hong, J. Non-Cryst. Growth 261, 16 (2004).

Zhang, F.

Z. Zhang, S. Yang, F. Zhang, and D. Li, J. Non-Cryst. Growth 243, 71 (2002).

Zhang, Z.

Z. Zhang, S. Yang, F. Zhang, and D. Li, J. Non-Cryst. Growth 243, 71 (2002).

Zheng, C.

C. Zheng, L. Wang, W. Fang, Y. Pu, J. Dai, and F. Jiang, Acta Opt. Sin. (in Chinese) 26, 463 (2006).

Acta Opt. Sin. (in Chinese) (1)

C. Zheng, L. Wang, W. Fang, Y. Pu, J. Dai, and F. Jiang, Acta Opt. Sin. (in Chinese) 26, 463 (2006).

Appl. Phys. Lett. (1)

M. Yamaguchi, A. Yamamo, M. Tachikawa, Y. Itoh, and M. Sugo, Appl. Phys. Lett. 53, 2293 (1988).

IEEE Photon. Technol. Lett. (1)

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida, IEEE Photon. Technol. Lett. 13, 151 (2001).

J. Appl. Phys. (2)

M. K. Lee, D. S. Wuu, and H. H. Tung, J. Appl. Phys. 62, 3209 (1987).

J. P. Hirth and X. X. Feng, J. Appl. Phys. 67, 3343 (1989).

J. Non-Cryst. Growth (6)

Y. Takano, T. Sasaki, Y. Nagaki, K. Kuwahara, S. Fuke, and T. Imai, J. Non-Cryst. Growth 169, 621 (1996).

Y. Okuno, T. Kawano, M. Koguchi, and K. Nakamura, J. Non-Cryst. Growth 137, 313 (1994).

K. Radhakrishnan, K. Yuan, and W. Hong, J. Non-Cryst. Growth 261, 16 (2004).

M. B. Derbali, J. Meddeb, H. Maaref, D. Buttard, P. Abraham, and Y. Monteil, J. Non. Cryst. Growth 84, 503 (1998).

Z. Zhang, S. Yang, F. Zhang, and D. Li, J. Non-Cryst. Growth 243, 71 (2002).

H. Uchida, T. Soga, H. Nishikawa, T. Jimbo, and M. Umeno, J. Non-Cryst. Growth 150, 681 (1995).

Jpn. J. Appl. Phys. (1)

C.-I. Liao, K.-F. Yarn, C.-L. Lin, Y.-L. Lin, and Y.-H. Wang, Jpn. J. Appl. Phys. 42, 4913 (2003).

Microelectron. J. (1)

A. Ren, X. Ren, Q. Wang, D. Xiong, H. Huang, and Y. Huang, Microelectron. J. 37, 700 (2006).

Rev. Physicae (1)

M. A. Hayashi and R. Marcon, Rev. Physicae 1, 21 (2000).

Solid-State Electron. (1)

Y. M. Kim, M. Dahlstrom, S. Lee, M. J. W. Rodwell, and A. C. Gossard, Solid-State Electron. 46, 1541 (2002).

Thin Solid Films (1)

T. W. Kim, M. Jung, T. H. Park, J. W. Cho, and H. L. Park, Thin Solid Films 257, 36 (1995).

Other (1)

Z. J. Xu, The Foundation of Surface Science of Latter-Day Semiconductor Material (in Chinese) (Peking University Press, Beijing, 1999) p.387.

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