Abstract

Ta2O5 films were prepared with conventional electron beam evaporation and annealed in O2 at 673 K for 12 h. Laser-induced damage thresholds (LIDTs) of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly, and then were performed at 532, 800, and 1064 nm in n-on-1 regime, respectively. The results showed that the LIDTs in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm. In addition, in n-on-1 regime, the LIDT increased with the increase of wavelength. Furthermore, both the optical property and LIDT of Ta2O5 films were influenced by annealing in O2.

© 2007 Chinese Optics Letters

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2007 (1)

2005 (2)

J.-Y. Natoli, B. Bertussi, and M. Commandre, Opt. Lett. 30, 1315 (2005).

Y. A. Zhao, J. D. Shao, H. He, and Z. Fan, Proc. SPIE 5991, 599117 (2005).

2003 (1)

Y. Zhao, Y. Wang, H. Gong, J. Shao, and Z. Fan, Appl. Surf. Sci. 210, 353 (2003).

1999 (3)

H. Kouta, Appl. Opt. 38, 545 (1999).

G. N. Strauss, W. Lechner, and H. K. Pulker, Thin Solid Films 351, 53 (1999).

J. Y. Zhang, I. W. Boyd, V. Dusastre, and D. E. Williams, J. Phys. D 32, L91 (1999).

1995 (2)

I. Kim, J.-S. Kim, O.-S. Kwon, S.-T. Ahn, J.-S. Chun, and W.-J. Lee, J. Electron. Mater. 24, 1435 (1995).

A. Pignolet, G. M. Rao, and S. B. Krupanidhi, Thin Solid Films 258, 230 (1995).

1989 (1)

C. R. Wolfe, M. R. Kozlowski, J. H. Campbell, F. Rainer, A. J. Morgan, and R. P. Gonzales, Proc. SPIE 801, 360 (1989).

1981 (2)

T. W. Walker, A. H. Guenther, and P. E. Nielsen, IEEE J. Quantum Electron. 17, 2041 (1981).

T. W. Walker, A. H. Guenther, and P. Nielsen, IEEE J. Quantum Electron. 17, 2053 (1981).

Appl. Opt. (1)

Appl. Surf. Sci. (1)

Y. Zhao, Y. Wang, H. Gong, J. Shao, and Z. Fan, Appl. Surf. Sci. 210, 353 (2003).

IEEE J. Quantum Electron. (2)

T. W. Walker, A. H. Guenther, and P. E. Nielsen, IEEE J. Quantum Electron. 17, 2041 (1981).

T. W. Walker, A. H. Guenther, and P. Nielsen, IEEE J. Quantum Electron. 17, 2053 (1981).

J. Electron. Mater. (1)

I. Kim, J.-S. Kim, O.-S. Kwon, S.-T. Ahn, J.-S. Chun, and W.-J. Lee, J. Electron. Mater. 24, 1435 (1995).

J. Opt. Soc. Am. B (1)

J. Phys. D (1)

J. Y. Zhang, I. W. Boyd, V. Dusastre, and D. E. Williams, J. Phys. D 32, L91 (1999).

Opt. Lett. (1)

Proc. SPIE (2)

C. R. Wolfe, M. R. Kozlowski, J. H. Campbell, F. Rainer, A. J. Morgan, and R. P. Gonzales, Proc. SPIE 801, 360 (1989).

Y. A. Zhao, J. D. Shao, H. He, and Z. Fan, Proc. SPIE 5991, 599117 (2005).

Thin Solid Films (2)

G. N. Strauss, W. Lechner, and H. K. Pulker, Thin Solid Films 351, 53 (1999).

A. Pignolet, G. M. Rao, and S. B. Krupanidhi, Thin Solid Films 258, 230 (1995).

Other (1)

ISO 11254-1 Lasers and Laser-Related Equipment - Determination of Laser-Induced Damage Threshold of Optical Surfaces (2000) Part 1: 1-on-1 test.

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