Abstract

Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a peak at 593 nm, and electroluminescence (EL) was measured with a peak at 556 nm under the conditions of 7.5-V forward bias and 210-mA current intensity. The spectral width of EL was measured to be about 160 nm.

© 2006 Chinese Optics Letters

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N. Koshida, H. Koyama, Y. Yamamoto, and G. J. Collins, Appl. Phys. Lett. 63, 2655 (1993).

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P. Steinr, F. Kozlowski, and W. Lang, Appl. Phys. Lett. 62, 2700 (1993).

G. Barillaro, A. Diligent, F. Pieri, F. Fuso, and M. Allegrini, Appl. Phys. Lett. 78, 4154 (2001).

V. Lehmann and U. Gosele, Appl. Phys. Lett. 58, 856 (1991).

Chin. Opt. Lett. (1)

J. Appl. Phys. (1)

T. Oguro, H. Koyama, T. Ozaki, and N. Koshida, J. Appl. Phys. 81, 1407 (1997).

Jpn. J. Appl. Phys. (1)

K. Nishimura, Y. Nagao, and N. Ikeda, Jpn. J. Appl. Phys. 37, 303 (1998).

Nature (1)

A. G. Cullis and L. T. Canham, Nature 353, 335 (1991).

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