Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Chinese Optics Letters
  • Vol. 3,
  • Issue S1,
  • pp. S31-S33
  • (2005)

Experimental characterization improving the design of InGaAs/InP APD for single photon detection

Not Accessible

Your library or personal account may give you access

Abstract

The passively quenched operation of avalanche photodiode (APD) has been used to characterizing InGaAs/InP APD including punch through voltage, avalanche voltage and break down voltage that are all important in the design of APD for single photon detection. The punch through voltage at certain doping level can be related to the thickness of the InP multiplication layer and the thickness of the un-intentionally doped n-type InP layer can be adjusted in according to the experimental data. The analysis indicates that the punch through voltage should be close to the breakdown voltage that can be realized by adjusting the thickness of InP multiplication layer.

© 2005 Chinese Optics Letters

PDF Article
More Like This
Nanosecond single-photon timing with InGaAs/InP photodiodes

F. Zappa, A. Lacaita, S. Cova, and P. Webb
Opt. Lett. 19(11) 846-848 (1994)

Design considerations of high-performance InGaAs/InP single-photon avalanche diodes for quantum key distribution

Jian Ma, Bing Bai, Liu-Jun Wang, Cun-Zhu Tong, Ge Jin, Jun Zhang, and Jian-Wei Pan
Appl. Opt. 55(27) 7497-7502 (2016)

Laser ranging at 1550 nm with 1-GHz sine-wave gated InGaAs/InP APD single-photon detector

Min Ren, Xiaorong Gu, Yan Liang, Weibin Kong, E. Wu, Guang Wu, and Heping Zeng
Opt. Express 19(14) 13497-13502 (2011)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved