Abstract

In this paper, the p-i-n multiple-layer Al_(x)Ga_(1-x)N sample with high Al (x>0.45) content was measured by the triple-axis X-ray diffraction measurement. The strain state and screw dislocation density of each layer in Al_(x)Ga_(1-x)N epitaxial layers were determined by RSM (reciprocal space map) method. Then, the PV function was used to fit the rock curves separated from the RSM. At last, the strain and the screw dislocation density of each layer were accurately calculated by fitting these rock curves.

© 2005 Chinese Optics Letters

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  2. T. A. Lafford and P. J. Parbrook, Phys. Stat. Sol. C 1, 542 (2002).
  3. W. J. Bartels and W. Nijman, Crystal Growth 44, 518 (1978).
  4. J. Hornstra and W. J. Bartels, Crystal Growth 44, 513 (1978).
  5. T. Metzger, R. Hopler, and E. Born, Philos. Mag. A 77, 1013 (1998).
  6. J. Domagala, M. Leszczynski, and P. Prystawko, Alloy and Compounds 286, 284 (1999).
  7. J. E. Ayers, Crystal Growth 135, 71 (1994).
  8. E. Zielinska-Rohozinska, M. Kowalska, and K. Pakula, Cryst. Res. Technol. 38, 951 (2003).
  9. S. Einfeldt, V. Kirchner, H. Heinke, M. Diebelberg, S. Figge, K. Vogeler, and D. Hommel, J. Appl. Phys. 88, 7029 (2000).

2003 (1)

E. Zielinska-Rohozinska, M. Kowalska, and K. Pakula, Cryst. Res. Technol. 38, 951 (2003).

2002 (1)

T. A. Lafford and P. J. Parbrook, Phys. Stat. Sol. C 1, 542 (2002).

2001 (1)

P. F. Fewster, N. L. Andrew, and C. T. Foxon, Crystal Growth 230, 398 (2001).

2000 (1)

S. Einfeldt, V. Kirchner, H. Heinke, M. Diebelberg, S. Figge, K. Vogeler, and D. Hommel, J. Appl. Phys. 88, 7029 (2000).

1999 (1)

J. Domagala, M. Leszczynski, and P. Prystawko, Alloy and Compounds 286, 284 (1999).

1998 (1)

T. Metzger, R. Hopler, and E. Born, Philos. Mag. A 77, 1013 (1998).

1994 (1)

J. E. Ayers, Crystal Growth 135, 71 (1994).

1978 (2)

W. J. Bartels and W. Nijman, Crystal Growth 44, 518 (1978).

J. Hornstra and W. J. Bartels, Crystal Growth 44, 513 (1978).

Alloy and Compounds (1)

J. Domagala, M. Leszczynski, and P. Prystawko, Alloy and Compounds 286, 284 (1999).

Cryst. Res. Technol. (1)

E. Zielinska-Rohozinska, M. Kowalska, and K. Pakula, Cryst. Res. Technol. 38, 951 (2003).

Crystal Growth (4)

J. E. Ayers, Crystal Growth 135, 71 (1994).

P. F. Fewster, N. L. Andrew, and C. T. Foxon, Crystal Growth 230, 398 (2001).

W. J. Bartels and W. Nijman, Crystal Growth 44, 518 (1978).

J. Hornstra and W. J. Bartels, Crystal Growth 44, 513 (1978).

J. Appl. Phys. (1)

S. Einfeldt, V. Kirchner, H. Heinke, M. Diebelberg, S. Figge, K. Vogeler, and D. Hommel, J. Appl. Phys. 88, 7029 (2000).

Philos. Mag. A (1)

T. Metzger, R. Hopler, and E. Born, Philos. Mag. A 77, 1013 (1998).

Phys. Stat. Sol. C (1)

T. A. Lafford and P. J. Parbrook, Phys. Stat. Sol. C 1, 542 (2002).

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