Abstract

We systematically investigate a strain of self-assembled InAs/GaAs quantum dots (QDs) for the case of growth on a (001) substrate. The dependence of the biaxial and hydrostatic components of the strain on the quantum dot aspect ratio is studied using a finite element method. The dependence of the carrier's confining potentials is then calculated in the framework of eight-band kp theory. The shifts of the energy level in three shapes of QDs are investigated. By comparing the results, the influence of the strain on the QDs are given.

© 2005 Chinese Optics Letters

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  1. M. Gtundmann, O. Stier, and D. Bimgberg, Phys. Rev. B 52, 11969 (1995).
  2. R. Mervyn and P. A. Maksym, Phys. Rev. B 68, 235308 (2003).
  3. T. Saito, J. N. Schulman, and Y. ArakAwa, Phys. Rev. B 57, 13016 (1998).
  4. M. Califano and P. Harrison, J. Appl. Phys. 91, 389 (2002).
  5. H. Yang, Z. Yu, Y. Liu, and Y. Huang, J. Synthetic Crystals (in Chinese) 33, 531 (2004).

2004 (1)

H. Yang, Z. Yu, Y. Liu, and Y. Huang, J. Synthetic Crystals (in Chinese) 33, 531 (2004).

2003 (1)

R. Mervyn and P. A. Maksym, Phys. Rev. B 68, 235308 (2003).

2002 (1)

M. Califano and P. Harrison, J. Appl. Phys. 91, 389 (2002).

1998 (1)

T. Saito, J. N. Schulman, and Y. ArakAwa, Phys. Rev. B 57, 13016 (1998).

1995 (1)

M. Gtundmann, O. Stier, and D. Bimgberg, Phys. Rev. B 52, 11969 (1995).

J. Appl. Phys. (1)

M. Califano and P. Harrison, J. Appl. Phys. 91, 389 (2002).

J. Synthetic Crystals (in Chinese) (1)

H. Yang, Z. Yu, Y. Liu, and Y. Huang, J. Synthetic Crystals (in Chinese) 33, 531 (2004).

Phys. Rev. B (3)

M. Gtundmann, O. Stier, and D. Bimgberg, Phys. Rev. B 52, 11969 (1995).

R. Mervyn and P. A. Maksym, Phys. Rev. B 68, 235308 (2003).

T. Saito, J. N. Schulman, and Y. ArakAwa, Phys. Rev. B 57, 13016 (1998).

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