Abstract

ZnO is an n-type semiconductor having a hexagonal wurtzite structure. By X-ray diffraction (XRD) and scanning electron microscope (SEM), the influences of substrate temperature, the ratio of Ar to O2 and thermal temperature on ZnO crystal quality were studied. The results show that ZnO films deaposited at substrate temperature of 240 Celsius degrees and Ar:O2=1:3 have the best crystallization. UV photoluminescence is observed when ZnO films are excited by He-Cd laser at room temperature. Stress at boundary causes an intrinsic UV emission peak shift to the lower energy. Oxygen vacancy or zinc interstitial causes deep-level emission. With higher substrate temperature, the crystallization is improved and the stress and deep-level green emission are reduced.

© 2005 Chinese Optics Letters

PDF Article

References

  • View by:
  • |
  • |

  1. Z. K. Tang, G. K. L. Wong, and P. Yu, Appl. Phys. Lett. 72, 3270 (1998).
  2. E. Robert, Service Science 276, 895 (1997).
  3. B. J. Jin, S. H. Bae, S. Y. Lee, and S. Im, Mater. Sci. Eng. B 71, 301 (2000).
  4. J. G. Li, L. Wang, and Z. Z. Ye, Vac. Sci. Technol. 19, 349 (1999).
  5. M. Kawasaki, A. Ohtomo, and H. Koinuma, Mat. Sci. Forum. 264, 1459 (1998).
  6. J. F. Muth and R. M. Kolbas, J. Appl. Phys. 85, 7884 (1999).
  7. D. M. Bagnall, Y. F. Chen, and Z. Zhu, Appl. Phys. Lett. 70, 2230 (1997).
  8. P. Zu, Z. K. Tang, and G. K. L. Wong, Solid State Commun. 103, 459 (1997).

2000 (1)

B. J. Jin, S. H. Bae, S. Y. Lee, and S. Im, Mater. Sci. Eng. B 71, 301 (2000).

1999 (2)

J. G. Li, L. Wang, and Z. Z. Ye, Vac. Sci. Technol. 19, 349 (1999).

J. F. Muth and R. M. Kolbas, J. Appl. Phys. 85, 7884 (1999).

1998 (2)

M. Kawasaki, A. Ohtomo, and H. Koinuma, Mat. Sci. Forum. 264, 1459 (1998).

Z. K. Tang, G. K. L. Wong, and P. Yu, Appl. Phys. Lett. 72, 3270 (1998).

1997 (3)

E. Robert, Service Science 276, 895 (1997).

D. M. Bagnall, Y. F. Chen, and Z. Zhu, Appl. Phys. Lett. 70, 2230 (1997).

P. Zu, Z. K. Tang, and G. K. L. Wong, Solid State Commun. 103, 459 (1997).

Appl. Phys. Lett. (2)

Z. K. Tang, G. K. L. Wong, and P. Yu, Appl. Phys. Lett. 72, 3270 (1998).

D. M. Bagnall, Y. F. Chen, and Z. Zhu, Appl. Phys. Lett. 70, 2230 (1997).

J. Appl. Phys. (1)

J. F. Muth and R. M. Kolbas, J. Appl. Phys. 85, 7884 (1999).

Mat. Sci. Forum. (1)

M. Kawasaki, A. Ohtomo, and H. Koinuma, Mat. Sci. Forum. 264, 1459 (1998).

Mater. Sci. Eng. B (1)

B. J. Jin, S. H. Bae, S. Y. Lee, and S. Im, Mater. Sci. Eng. B 71, 301 (2000).

Service Science (1)

E. Robert, Service Science 276, 895 (1997).

Solid State Commun. (1)

P. Zu, Z. K. Tang, and G. K. L. Wong, Solid State Commun. 103, 459 (1997).

Vac. Sci. Technol. (1)

J. G. Li, L. Wang, and Z. Z. Ye, Vac. Sci. Technol. 19, 349 (1999).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.