Abstract

A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented. Using this method, a silicon layer is left at the side of waveguide. The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method, respectively. The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.

© 2005 Chinese Optics Letters

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E. Wildermuth, Ch. Nadler, M. Lanker, W. Hunziker, and H. Melchior, Electron. Lett. 34, 1661 (1998).

1997

Y. Inoue, H. Takahashi, S. Ando, T. Sawada, A. Himeno, and M. Kawachi, J. Lightwave Technol. 15, 1947 (1997).

S. Suzuki, S. Sumida, Y. Inoue, M. Ishii, and Y. Ohmori, Electron. Lett. 33, 1173 (1997).

1995

G. R. Hadley and R. E. Smith, J. Lightwave Technol. 13, 465 (1995).

1993

H. Takahashi, Y. Hibino, Y. Ohmori, and M. Kawachi, IEEE Photon. Technol. Lett. 5, 707 (1993).

1980

1965

J. J. Wortman and R. A. Evans, J. Appl. Phys. 36, 153 (1965).

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L. Maissel, J. Appl. Phys. 31, 211 (1960).

Ando, S.

Y. Inoue, H. Takahashi, S. Ando, T. Sawada, A. Himeno, and M. Kawachi, J. Lightwave Technol. 15, 1947 (1997).

Evans, R. A.

J. J. Wortman and R. A. Evans, J. Appl. Phys. 36, 153 (1965).

Hadley, G. R.

G. R. Hadley and R. E. Smith, J. Lightwave Technol. 13, 465 (1995).

Hibino, Y.

H. Takahashi, Y. Hibino, Y. Ohmori, and M. Kawachi, IEEE Photon. Technol. Lett. 5, 707 (1993).

Himeno, A.

Y. Inoue, H. Takahashi, S. Ando, T. Sawada, A. Himeno, and M. Kawachi, J. Lightwave Technol. 15, 1947 (1997).

Hunziker, W.

E. Wildermuth, Ch. Nadler, M. Lanker, W. Hunziker, and H. Melchior, Electron. Lett. 34, 1661 (1998).

Inoue, Y.

Y. Inoue, H. Takahashi, S. Ando, T. Sawada, A. Himeno, and M. Kawachi, J. Lightwave Technol. 15, 1947 (1997).

S. Suzuki, S. Sumida, Y. Inoue, M. Ishii, and Y. Ohmori, Electron. Lett. 33, 1173 (1997).

Ishii, M.

S. Suzuki, S. Sumida, Y. Inoue, M. Ishii, and Y. Ohmori, Electron. Lett. 33, 1173 (1997).

Kawachi, M.

Y. Inoue, H. Takahashi, S. Ando, T. Sawada, A. Himeno, and M. Kawachi, J. Lightwave Technol. 15, 1947 (1997).

H. Takahashi, Y. Hibino, Y. Ohmori, and M. Kawachi, IEEE Photon. Technol. Lett. 5, 707 (1993).

Koshiba, M.

Lanker, M.

E. Wildermuth, Ch. Nadler, M. Lanker, W. Hunziker, and H. Melchior, Electron. Lett. 34, 1661 (1998).

Maissel, L.

L. Maissel, J. Appl. Phys. 31, 211 (1960).

Melchior, H.

E. Wildermuth, Ch. Nadler, M. Lanker, W. Hunziker, and H. Melchior, Electron. Lett. 34, 1661 (1998).

Nadler, Ch.

E. Wildermuth, Ch. Nadler, M. Lanker, W. Hunziker, and H. Melchior, Electron. Lett. 34, 1661 (1998).

Ohmori, Y.

S. Suzuki, S. Sumida, Y. Inoue, M. Ishii, and Y. Ohmori, Electron. Lett. 33, 1173 (1997).

H. Takahashi, Y. Hibino, Y. Ohmori, and M. Kawachi, IEEE Photon. Technol. Lett. 5, 707 (1993).

Saitoh, K.

Sawada, T.

Y. Inoue, H. Takahashi, S. Ando, T. Sawada, A. Himeno, and M. Kawachi, J. Lightwave Technol. 15, 1947 (1997).

Scherer, G. W.

Smith, R. E.

G. R. Hadley and R. E. Smith, J. Lightwave Technol. 13, 465 (1995).

Sumida, S.

S. Suzuki, S. Sumida, Y. Inoue, M. Ishii, and Y. Ohmori, Electron. Lett. 33, 1173 (1997).

Suzuki, S.

S. Suzuki, S. Sumida, Y. Inoue, M. Ishii, and Y. Ohmori, Electron. Lett. 33, 1173 (1997).

Takahashi, H.

Y. Inoue, H. Takahashi, S. Ando, T. Sawada, A. Himeno, and M. Kawachi, J. Lightwave Technol. 15, 1947 (1997).

H. Takahashi, Y. Hibino, Y. Ohmori, and M. Kawachi, IEEE Photon. Technol. Lett. 5, 707 (1993).

Tsuji, Y.

Wildermuth, E.

E. Wildermuth, Ch. Nadler, M. Lanker, W. Hunziker, and H. Melchior, Electron. Lett. 34, 1661 (1998).

Wortman, J. J.

J. J. Wortman and R. A. Evans, J. Appl. Phys. 36, 153 (1965).

Appl. Opt.

Electron. Lett.

S. Suzuki, S. Sumida, Y. Inoue, M. Ishii, and Y. Ohmori, Electron. Lett. 33, 1173 (1997).

E. Wildermuth, Ch. Nadler, M. Lanker, W. Hunziker, and H. Melchior, Electron. Lett. 34, 1661 (1998).

IEEE Photon. Technol. Lett.

H. Takahashi, Y. Hibino, Y. Ohmori, and M. Kawachi, IEEE Photon. Technol. Lett. 5, 707 (1993).

J. Appl. Phys.

L. Maissel, J. Appl. Phys. 31, 211 (1960).

J. J. Wortman and R. A. Evans, J. Appl. Phys. 36, 153 (1965).

J. Lightwave Technol.

G. R. Hadley and R. E. Smith, J. Lightwave Technol. 13, 465 (1995).

K. Saitoh, M. Koshiba, and Y. Tsuji, J. Lightwave Technol. 17, 255 (1999).

Y. Inoue, H. Takahashi, S. Ando, T. Sawada, A. Himeno, and M. Kawachi, J. Lightwave Technol. 15, 1947 (1997).

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