Abstract

We have set up a solid immersion lens (SIL) near-field static recording system for demonstrating preliminarily the feasibility of SIL technology in the higher density storage. The experimental result with recording mark size of 240 nm is obtained corresponding to a potential of density of tens of gigabits per square inch. Some factors in the SIL near-field recording are discussed.

© 2005 Chinese Optics Letters

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