Abstract

A laser-induced chemical vapor deposition (LICVD) nanometer equipment is designed and fabricated. The design conception of key parts is expatiated. The energy threshold of SiH4 decomposing is studied. In the condition of same reactive gas flux, the laser energy threshold decreases with the increase of SiH4 concentration. In the condition of same SiH4 concentration, with the increase of reactive gas flux, the laser energy threshold which induces SiH4 decomposition increases linearly at the beginning, and when the flux is more than 100 ml/min, it turns to increase slowly. The factors which influence the laser threshold are analyzed.

© 2005 Chinese Optics Letters

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References

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  1. H. Glerter, Prog. Mater. Sci.33, 223 (1989).
  2. H. Y. Zhang, A. X. Wei, S. H. Liu, W. Wang, D. Chen, L. Liang, and K. Chen, Thin Solid Films368, 315 (2000).
  3. S. Veprek, F.-A. Sarott, and Z. Iqbal, Phys. Rev. B36, 3344 (1987).

Other (3)

H. Glerter, Prog. Mater. Sci.33, 223 (1989).

H. Y. Zhang, A. X. Wei, S. H. Liu, W. Wang, D. Chen, L. Liang, and K. Chen, Thin Solid Films368, 315 (2000).

S. Veprek, F.-A. Sarott, and Z. Iqbal, Phys. Rev. B36, 3344 (1987).

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