Abstract

The population trapping effect of the F34 level is an important factor limiting the power scaling of the 2.3 µm thulium (Tm) laser on the H34H35 transition. In this Letter, we demonstrate a novel scheme of ground state absorption (GSA) (H36H34) and excited state absorption (ESA) (F34H34) dual-wavelength pumped 2.3 µm Tm lasers. Introducing an ESA pumping process can accurately excite the Tm3+ ions accumulated in the F34 level to the H34 level, constructing a double populating mechanism for the upper laser level H34. A proof-of-principle experimental demonstration of the GSA (785 nm) and ESA (1470 nm) dual-wavelength pumped 2.3 µm Tm:LiYF4 (Tm:YLF) laser was realized. A maximum continuous-wave output power of 1.84 W at 2308 nm was achieved under 785 and 1470 nm dual-wavelength pumping, increased by 60% compared with the case of 785 nm single-wavelength pumping under the same resonator condition. Our work provides an efficient way to achieve higher output power from 2.3 µm Tm-doped lasers on the H34H35 transition.

© 2021 Chinese Laser Press

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