Abstract

The photoelectric properties of conductive films are improved by doping Ag on aluminum-doped zinc oxide (AZO) films by laser induced forward transfer (LIFT). Firstly, the picosecond laser induced transfer mechanism of Ag films was revealed by numerical simulation; then, different-thickness Ag films were deposited on the AZO films by picosecond LIFT. When the film thickness is 30 nm and 50 nm, we have successfully obtained some Ag-AZO films with better optoelectronic properties by adjusting the laser parameters.

© 2020 Chinese Laser Press

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