Abstract

Graphene has attracted great interest in optoelectronics, owing to its high carrier mobility and broadband absorption. However, a graphene photodetector exhibits low photoresponsivity because of its weak light absorption. In this work, we designed a graphene/MoSe₂ heterostructure photodetector, which exhibits photoresponse ranging from visible to near infrared and an ultrahigh photoresponsivity up to 1.3×10⁴ A·W⁻¹ at 550 nm. The electron–hole pairs are excited in a few-layered MoSe₂ and separated by the built-in electric field. A large number of electrons shift to graphene, while the holes remain in the MoSe₂, which creates a photogating effect.

© 2019 Chinese Laser Press

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