Abstract

In this Letter, we report large-area (600 μm diameter) 4H-SiC avalanche photodiodes (APDs) with high gain and low dark current for visible-blind ultraviolet detection. Based on the separate absorption and multiplication structure, 4H-SiC APDs passivated with SiNx instead of SiO2 are demonstrated for the first time, to the best of our knowledge. Benefitting from the SiNx passivation, the surface leakage current is effectively suppressed. At room temperature, high multiplication gain of 6.5×105 and low dark current density of 0.88 μA/cm2 at the gain of 1000 are achieved for our devices, which are comparable to the previously reported small-area SiC APDs.

© 2018 Chinese Laser Press

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