Abstract

The depth profile of electric-field-induced (EFI) optical rectification (OR) and EFI Pockels effect (PE) in a Si(110) crystal are investigated. The results show that EFI OR and PE signals are very sensitive to the electric field strength in the surface layers of the Si crystal. Theoretical formulas that include the electric field parameters and the widths of the space-charge region are presented and agreed very well with the experimental results. The experiments and simulations indicate that EFI OR and PE are potential methods for researching the surface/interface properties along the depth direction in centrosymmetric crystals such as Si.

© 2017 Chinese Laser Press

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