Abstract
We investigate the temperature dependence of the emission spectrum
of a laser-induced semiconductor (Ge and Si) plasma. The change in
spectral intensity with the sample temperature indicates the change of the
laser ablation mass. The reflectivity of the target surface is reduced as
the sample is heated, which leads to an increase in the laser energy
coupled to the surface of the sample and eventually produces a higher
spectral intensity. The spectral intensities are enhanced by a few times
at high temperatures compared with the cases at low temperatures. The
spectral intensity of Ge is enhanced by 1.5 times at 422.66 nm, and 3
times at 589.33 nm when the sample temperature increases from 50°C to
300°C. We can obtain the same emission intensity by a more powerful laser
or by less pulse energy with a higher sample temperature. Based on
experimental observations we conclude that the preheated sample can
improve the emission intensity of laser-induced semiconductor plasma
spectroscopy.
© 2016 Chinese Laser Press
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription