Abstract

Pockel’s effect and optical rectification induced by the built-in electric field in the space charge region of a silicon surface layer are demonstrated in a {001}-cut high-resistance silicon crystal. The half-wave voltage is about 203 V, deduced by Pockel’s effect. The ratio χzxx(2)/χzzz(2) is calculated to be about 0.942 according to optical rectification. Our comparison with the Kerr signal shows that Pockel’s signal is much stronger. This indicates that these effects are so considerable that they should be taken into account when designing silicon-based photonic devices.

© 2015 Chinese Laser Press

Enhanced electro-optic beam deflection of relaxor ferroelectric KTN crystals by electric-field-induced high permittivity

Chang-Jiang Chen, Ju-Hung Chao, Yun Goo Lee, Annan Shang, Ruijia Liu, Shizhuo Yin, and Robert C. Hoffman
Opt. Lett. 44(22) 5557-5560 (2019)

Optical probing of electric fields with an electro-acoustic effect toward integrated circuit diagnosis

Ru-Long Jin, Han Yang, Di Zhao, Qi-Dai Chen, Zhao-Xu Yan, Mao-Bin Yi, and Hong-Bo Sun
Opt. Lett. 35(4) 580-582 (2010)

Robustness of electric field vector sensing of electromagnetic waves by analyzing crystal angle dependence of the electro-optic effect

Naoya Yasumatsu and Shinichi Watanabe
J. Opt. Soc. Am. B 30(11) 2940-2951 (2013)

Electric-field-induced optical activity in nonmagnetic crystals

M. J. Gunning and R. E. Raab
J. Opt. Soc. Am. B 14(7) 1692-1698 (1997)

Design of a silicon-based field-effect electro-optic modulator with enhanced light–charge interaction

Rohan D. Kekatpure, Mark L. Brongersma, and Rohit S. Shenoy
Opt. Lett. 30(16) 2149-2151 (2005)