Abstract

We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells (MQWs) laser at 1.55 μm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are grown on GaAs substrates by low-pressure metal organic chemical vapor deposition technology. Then, high-quality MQWs laser structures are grown on the InP buffer layer. Under quasi-continuous wave (QCW) condition, a threshold current of 476 mA and slope efficiency of 0.15 mW/mA are achieved for a broad area device with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is 1549.5 nm at 700 mA. The device is operating for more than 2000 h at room-temperature and 600 mA.

© 2015 Chinese Laser Press

1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure

Huolei Wang, Junping Mi, Xuliang Zhou, Laura Meriggi, Matthew Steer, Bifeng Cui, Weixi Chen, Jiaoqing Pan, and Ying Ding
Opt. Lett. 38(22) 4868-4871 (2013)

Comparison of growth structures for continuous-wave electrically pumped 1.55 μm quantum dash lasers grown on (001) Si

Wei Luo, Ying Xue, Jie Huang, Liying Lin, Bei Shi, and Kei May Lau
Photon. Res. 8(12) 1888-1894 (2020)

Integrated fabrication of a high strain InGaAs/GaAs quantum well structure under variable temperature and improvement of properties using MOCVD technology

Quhui Wang, Haizhu Wang, Bin Zhang, Xu Wang, Weichao Liu, Jiabin Wang, Jiao Wang, Jie Fan, Yonggang Zou, and Xiaohui Ma
Opt. Mater. Express 11(8) 2378-2388 (2021)

InAs/InGaAs Quantum Dot Lasers on Multi-Functional Metamorphic Buffer Layers

Jinkwan Kwoen, Takaya Imoto, and Yasuhiko Arakawa
Opt. Express 29(18) 29378-29386 (2021)

Experimental characterization of high-speed 1.55 μm buried heterostructure InGaAsP/InGaAlAs quantum-well lasers

M. Nadeem Akram, O. Kjebon, M. Chacinski, R. Schatz, J. Berggren, F. Olsson, S. Lourdudoss, and A. Berrier
J. Opt. Soc. Am. B 26(2) 318-327 (2009)